| Allicdata Part #: | ES1GE-TPMSTR-ND |
| Manufacturer Part#: |
ES1GE-TP |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Micro Commercial Co |
| Short Description: | DIODE GEN PURP 400V 1A DO214AC |
| More Detail: | Diode Standard 400V 1A Surface Mount DO-214AC (SMA... |
| DataSheet: | ES1GE-TP Datasheet/PDF |
| Quantity: | 6000 |
| 6000 +: | $ 0.04763 |
| 12000 +: | $ 0.04234 |
| 30000 +: | $ 0.03969 |
| 60000 +: | $ 0.03528 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 400V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.35V @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 75ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 400V |
| Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMAE) |
| Operating Temperature - Junction: | -50°C ~ 150°C |
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Diodes - Rectifiers - Single: ES1GE-TP Application Field and Working Principle
In the semiconductor industry, diodes are important components used for various purposes. As a result, diodes can be used in different sizes and shapes. One particular type of diode, which is included in the classification of diodes, rectifiers, and single, is the ES1GE-TP. This diode is one of the smallest components on the market, which makes it ideal for applications such as voltage regulation and high frequency switching.
The ES1GE-TP diode is an ultra-small and low-cost solution that provides well-known performance features of a PN junction diode. It includes an extremely small junction capacitance and fast switching time, which is beneficial for applications involving high frequency switching and voltage regulation. Its ultra-small size is further complemented by its high current carrying capability of 200 mA, making this diode a great choice for space constrained applications. Additionally, its reverse recovery time is extremely low, reducing losses and saving energy.
The working principle of the ES1GE-TP diode is similar to that of other diodes. An anode and cathode are separated by an insulating layer, known as the depletion region. When a voltage is applied to the circuit, the holes and electrons within the depletion region are attracted to the anode and cathode, respectively. As a result, current is able to flow through the diode.
In addition to its uses in voltage regulation and high frequency switching, the ES1GE-TP diode is also used in other applications, including current-limiting and detection. As a result, this diode has become a widely used device in the semiconductor industry. Furthermore, the ES1GE-TP diode has excellent temperature performance, making it suitable for high temperature applications.
In summary, the ES1GE-TP diode is an excellent device for voltage regulation, high frequency switching, current-limiting and detection, and high temperature applications. It offers the benefits of an ultra-small junction capacitance, fast switching time, and low reverse recovery time. Moreover, its small size and high current carrying capability makes it a great choice for space constrained applications. This diode has become an essential device in modern-day electronics, which has greatly improved the way that electronic systems are designed.
The specific data is subject to PDF, and the above content is for reference
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ES1GE-TP Datasheet/PDF