ES1GE-TP Allicdata Electronics
Allicdata Part #:

ES1GE-TPMSTR-ND

Manufacturer Part#:

ES1GE-TP

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 400V 1A DO214AC
More Detail: Diode Standard 400V 1A Surface Mount DO-214AC (SMA...
DataSheet: ES1GE-TP datasheetES1GE-TP Datasheet/PDF
Quantity: 6000
6000 +: $ 0.04763
12000 +: $ 0.04234
30000 +: $ 0.03969
60000 +: $ 0.03528
Stock 6000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMAE)
Operating Temperature - Junction: -50°C ~ 150°C
Description

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Diodes - Rectifiers - Single: ES1GE-TP Application Field and Working Principle

In the semiconductor industry, diodes are important components used for various purposes. As a result, diodes can be used in different sizes and shapes. One particular type of diode, which is included in the classification of diodes, rectifiers, and single, is the ES1GE-TP. This diode is one of the smallest components on the market, which makes it ideal for applications such as voltage regulation and high frequency switching.

The ES1GE-TP diode is an ultra-small and low-cost solution that provides well-known performance features of a PN junction diode. It includes an extremely small junction capacitance and fast switching time, which is beneficial for applications involving high frequency switching and voltage regulation. Its ultra-small size is further complemented by its high current carrying capability of 200 mA, making this diode a great choice for space constrained applications. Additionally, its reverse recovery time is extremely low, reducing losses and saving energy.

The working principle of the ES1GE-TP diode is similar to that of other diodes. An anode and cathode are separated by an insulating layer, known as the depletion region. When a voltage is applied to the circuit, the holes and electrons within the depletion region are attracted to the anode and cathode, respectively. As a result, current is able to flow through the diode.

In addition to its uses in voltage regulation and high frequency switching, the ES1GE-TP diode is also used in other applications, including current-limiting and detection. As a result, this diode has become a widely used device in the semiconductor industry. Furthermore, the ES1GE-TP diode has excellent temperature performance, making it suitable for high temperature applications.

In summary, the ES1GE-TP diode is an excellent device for voltage regulation, high frequency switching, current-limiting and detection, and high temperature applications. It offers the benefits of an ultra-small junction capacitance, fast switching time, and low reverse recovery time. Moreover, its small size and high current carrying capability makes it a great choice for space constrained applications. This diode has become an essential device in modern-day electronics, which has greatly improved the way that electronic systems are designed.

The specific data is subject to PDF, and the above content is for reference

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