ESD7571N2T5G Circuit Protection |
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Allicdata Part #: | ESD7571N2T5GOSTR-ND |
Manufacturer Part#: |
ESD7571N2T5G |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | ON Semiconductor |
Short Description: | TVS DIODE 5.3V 15V 2X2DFN |
More Detail: | N/A |
DataSheet: | ESD7571N2T5G Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 5.3V (Max) |
Voltage - Breakdown (Min): | 7V |
Voltage - Clamping (Max) @ Ipp: | 15V |
Current - Peak Pulse (10/1000µs): | -- |
Power - Peak Pulse: | -- |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | 0.24pF @ 1MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 2-XDFN |
Supplier Device Package: | 2-X2DFN (1x0.6) |
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TVS - Diodes
TVS - Diodes are semiconductor devices used to protect against high and low levels of transients and voltage spikes. They are available in a variety of shapes and sizes, and are commonly used in military, aviation, and consumer electronics applications. The ESD7571N2T5G is a uni-directional TVS Diode that is widely used in applications that require protection from surges, overvoltages, and electrostatic discharges.
ESD7571N2T5G Application Field
The ESD7571N2T5G is used in a wide variety of applications due to its robust protection against high and low levels of transients and voltage spikes. It is commonly used in military and avionics applications that require increased protection from voltage transients and is found in applications such as protection circuits for telecom systems, computers, and power supplies. In addition, it is also used widely in consumer electronics applications such as in laptops and digital cameras to provide overvoltage protection.
ESD7571N2T5G Working Principle
The ESD7571N2T5G utilizes a uni-directional avalanche breakdown mechanism which requires very low levels of voltage to trigger the clamping action. This mechanism is beneficial as it only acts to protect components against voltage transients when the voltage level exceeds the breakdown voltage of a certain degree. Additionally, the ESD7571N2T5G has a low minimum breakdown voltage of 5 volts and a peak pulse power rating of 350 Watts, making it a suitable choice for applications requiring advanced protection from overvoltages and transients.
The ESD7571N2T5G also features a low clamping voltage, allowing its protective mechanism to be triggered at low voltage levels. Additionally, it also has a low capacitance and low series resistance, which ensures that it does not affect the normal functioning of the circuit. Furthermore, it also provides a fast response time, allowing it to react quickly to overvoltage transients.
Overall, the ESD7571N2T5G is a highly reliable and dependable TVS diode, providing a robust solution for commercial and military applications that require advanced protection from high or low levels of voltage transients. Its uni-directional avalanche breakdown mechanism and fast response time make it an ideal choice for applications that require reliable overvoltage protection.
The specific data is subject to PDF, and the above content is for reference
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