FD6M016N03 Allicdata Electronics
Allicdata Part #:

FD6M016N03-ND

Manufacturer Part#:

FD6M016N03

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 30V 80A EPM15
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 80A Through H...
DataSheet: FD6M016N03 datasheetFD6M016N03 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Power-SPM™
Packaging: Tube 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V
Power - Max: --
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: EPM15
Supplier Device Package: EPM15
Description

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The FD6M016N03 is a semiconductor array consisting of sixteen N- Channel Metal Oxide Semiconductor field-effect transistors (MOSFETs). The device has a monolithic structure, and it is designed with specifications that help it be used in power management and switching applications. The device is sold in an 8 pin mini Molded Chip package, and it has a number of subfeatures that make it a useful device for power management.

The FD6M016N03 has a maximum current rating of 15 amperes and a drain source voltage of 30 volts. It has a low gate-to-source threshold voltage of between 2.1 and 2.4 volts, and it also has a high input impedance of 100 Megaohms. It has a low on-state resistance of between 12 and 15 ohms, as well as a high power dissipation rating of 650 milliwatts. In addition, the device has a high frequency capability of 5 MHz and it can protect against electrostatic discharge with an ESD rating of 8 kilovolts.

The FD6M016N03 is a versatile device, able to handle a wide range of applications. It offers a number of desirable characteristics in the areas of power management, including low RDS On resistance, fast switching times, low power consumption, and high current switching capability. The device can be used to replace multiple transistors, providing an efficient and cost-effective solution for power management. It is ideal for powering multiple electronic devices at once, and it can be used in consumer electronics such as computers, cell phones, and other portable devices.

The FD6M016N03 operates under a principle of operation known as the MOS Field Effect Transistor (FET). This means that it is a voltage-controlled semiconductor device, which can be used to control the current flow within a circuit. An electric field is used to control the current between the source and drain terminals. This is achieved by changing the voltage on the gate terminal, the voltage differential between the source and drain, and the channel resistance between the source and drain. When an external voltage is applied to the gate terminal, the channel resistance between the source and drain changes. This change in resistance then controls the current flow.

The FD6M016N03 can be used for a number of power management applications in consumer electronics devices. The device is ideal for powering multiple independent devices, as it can switch between both high and low current states rapidly and efficiently. It can be used to control power supply current in computers, cell phones and other devices that require multiple power supplies. In addition, it can be used to improve the power efficiency of a system by controlling the power efficiently to multiple devices. Finally, the device is also useful for switching between multiple power supplies or for boosting the power supply current.

The FD6M016N03 is an excellent choice for tasks that require efficient power management and switching. It is reliable, fast, and efficient, and it is also cost-effective. The device is ideal for a wide range of applications, making it a valuable and versatile device that can provide significant performance improvements in power management. It is an excellent choice for both basic and advanced applications, and it is easy to use and maintain.

The specific data is subject to PDF, and the above content is for reference

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