Allicdata Part #: | FD6M043N08-ND |
Manufacturer Part#: |
FD6M043N08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 75V 65A EPM15 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 75V 65A Through H... |
DataSheet: | FD6M043N08 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Power-SPM™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 65A |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 148nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 6180pF @ 25V |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | EPM15 |
Supplier Device Package: | EPM15 |
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The FD6M043N08 is a power MOSFET array, a type of transistor consisting of four individually controlled drains and one common source. It features a low on-state resistance, making it ideal for applications requiring high current capacity and excellent thermal performance. Built with an internal architecture of four N-channel Power MOSFETs and a single common source, it has a high-side blocking capability, with maximum drain-source voltage ratings of up to 600V. This makes the FD6M043N08 many times more reliable than single FETs.
The FD6M043N08 is suitable for a range of power circuit applications, including motor drives and power converters. It is ideal for applications requiring high current switching - such as light dimmer or home appliances controllers - as well as for applications such as interleaved buck/boost DC-DC converters and high power inverters. It can also be used in power management systems that operate at low frequencies.
The FD6M043N08 has several safety features, including over-voltage protection, over-temperature protection, and gate-source ESD protection. It also has soft-start and current limit control, which can be set to provide a smooth on-state transition during load transient conditions.
The working principle of the FD6M043N08 is not very different from that of a single FET. It uses a gate voltage to control the drain-source current by manipulating the internal electrical fields. When a voltage is applied between the gate and source, a current flows through the various parasitic elements, resulting in an internal electric field. This electric field modulates the conduction channel, thereby controlling the drain-source current. Once the desired level of drain-source current is achieved, the voltage can be adjusted or removed to achieve the desired switch state.
The FD6M043N08 is suitable for both low and high frequency switching applications. It can be used to switch current between both positive and negative polarities. It is suitable for operation in high temperature, harsh environmental conditions and can achieve high switching speeds with minimal power dissipation. The robust construction and low on-state resistance make the FD6M043N08 an ideal choice for many power switching applications.
The specific data is subject to PDF, and the above content is for reference
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