FDM3300NZ

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The FDM3300NZ is an Application-Specific Integrated Circuit (ASIC) designed for applications requiring high-performance power MOSFET array switching. It consists of four N-channel power MOSFETs in a dual package. The FDM3300NZ is designed for use in applications such as high-frequency switching, synchronous rectification, and high-power control circuit applications. The FDM3300NZ features a low-threshold voltage to minimize switching gate current, high break-down voltage for superior electrical performance, and a low gate charge for increased switching efficiency.

The FDM3300NZ is a multi-chip MOSFET array consisting of four N-channel MOSFETs, each with their own gate, source, and drain connections. Each MOSFET is designed to handle a specific power level, allowing the user to select the appropriate MOSFETs for their application. The FDM3300NZ also features an integrated Active Body Diode (ABD), which eliminates the need for external diode protection when supplying large-scale high-speed gate switching.

When designing a circuit with the FDM3300NZ, it is important to consider the gate-to-source and the drain-to-source voltages. The gate-to-source voltage should not exceed the maximum rating of 17 volts and the drain-to-source voltage should not exceed the maximum rating of 30 volts. If either of these values is exceeded, the FDM3300NZ could become damaged.

The FDM3300NZ also features integrated ESD protection for the gate, as well as internal EMI protection to minimize electromagnetic interference. The ESD protection allows the FDM3300NZ to be used in applications with high levels of static electricity, while the EMI protection ensures that the array\'s emitted signals will not interfere with other electronic components. Additionally, the FDM3300NZ features a low leakage current, allowing it to be used in applications that require low power consumption.

The FDM3300NZ is a great choice for applications such as high-frequency switching, synchronous rectification, and high-power control circuit applications. With its low-threshold voltage, high breakdown voltage, and low gate charge, the FDM3300NZ allows users to design circuits with superior switching efficiency. Additionally, the integrated ESD and EMI protection and low leakage current make the FDM3300NZ a great choice for applications that require high performance and reliability.

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