| Allicdata Part #: | FDM3622TR-ND |
| Manufacturer Part#: |
FDM3622 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 4.4A 8MLP |
| More Detail: | N-Channel 100V 4.4A (Ta) 2.1W (Ta) Surface Mount 8... |
| DataSheet: |  FDM3622 Datasheet/PDF |
| Quantity: | 9000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | 8-MLP (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1090pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.4A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FET3622 is a single-channel N-Channel MOSFET designed to meet the precise requirements of high-speed switching applications. The FET3622 occupies only 12X3.3 mm surface mount area, a very small amount of space compared to other MOSFETs. The FET3622 also has low on-resistance, fast switching speed, and low gate charge, making it ideal for a variety of high-speed switching applications such as power-train systems.
Applications
Some of the applications that can benefit from using the FET3622 include:
- Inductive motor drive
- Power transistors-high speed switching
- Lighting ballasts
- Pulse power-train systems
- High frequency switching
- Gate driver MOSFET
Working Principle
The FET3622 is a single-channel N-Channel MOSFET. A MOSFET is a type of Field-Effect Transistor (FET) that uses metal oxide semiconductor (MOS) technology, hence the name of the device. The MOSFET works by controlling the current flow between two terminals through an adjustable electric field. This control of the current can either be done by the input voltage or by the voltage on the gate electrode, depending on the type of MOSFET.
In the case of the FET3622, the voltage on the gate electrode is used to control the current flow. This is done by the application of an appropriate gate voltage. When the gate voltage is applied, an electric field is generated between the source and the drain terminals, allowing current to flow between these terminals. The amount of current that flows through the device is proportional to the gate voltage, which can be adjusted to achieve the desired level of current.
The FET3622 is a voltage-controlled, high speed switching MOSFET, making it ideal for a variety of applications. It has a low on-resistance, fast switching speed, and low gate charge, making it a suitable choice for a variety of high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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