FDY4000CZ Allicdata Electronics

FDY4000CZ Discrete Semiconductor Products

Allicdata Part #:

FDY4000CZTR-ND

Manufacturer Part#:

FDY4000CZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N/P-CH 20V SC89-6
More Detail: Mosfet Array N and P-Channel 20V 600mA, 350mA 446m...
DataSheet: FDY4000CZ datasheetFDY4000CZ Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA, 350mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Description

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FDY4000CZ is a field-effect transistor (FET) array produced by Silan Microelectronics. FETs are unipolar devices which generally operate faster than their bipolar counterparts, making them suitable for applications requiring high-speed switching. The FDY4000CZ is an integrated package that contains four FETs connected in parallel, making it a cost-effective way to boost performance in many applications.

The FDY4000CZ is a four-in-one package, with each individual FET acting as a switch to provide enhanced control in a wide variety of applications. Each FET includes a gate terminal, a source terminal, and a drain terminal, which are connected in parallel. The gate terminal is used to control the on/off state of the FET, while the source and drain terminals allow current to flow through the device when it is in the on state.

The FDY4000CZ can be used in many applications, such as switching power supplies, motor control applications, and analog switches. It is particularly well-suited for high-speed switching applications as it can switch faster than other FETs due to its parallel connection of four FETs. It also has low input capacitance which allows it to be used in high-frequency switching applications where switching speed is a priority.

In addition to its fast switch-on and switch-off capabilities, the FDY4000CZ also offers improved power dissipation efficiency when compared to other types of FETs. This makes it ideal for applications which require high power levels while still providing efficient operation. It also offers improved temperature management with its built-in temperature protection and thermal shut down capability.

The FDY4000CZ has a low on-state resistance, which helps reduce power losses in applications that require high current loads. Its low reverse-recovery time allows for inrush current limiting, making it an apt choice for power supplies, motor control applications, and other applications that require efficient switching.

The FDY4000CZ\'s working principle is simple, yet efficient. The gate voltage can be used to adjust the current that passes through the FETs. The resistors connected between the gate and source are often adjusted to provide better control over the on-state current. This is then used to drive the load in the application. The gate voltage can also be adjusted to control the turn-on and turn-off times of the FETs.

In conclusion, the FDY4000CZ array provides an efficient and cost-effective solution for high-speed switching applications. Its advantages include fast switching times, low input capacitance, improved power dissipation, improved temperature management, and low on-state resistance, making it a great choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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