FDY4001CZ Discrete Semiconductor Products |
|
| Allicdata Part #: | FDY4001CZTR-ND |
| Manufacturer Part#: |
FDY4001CZ |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N/P-CH 20V SC89-6 |
| More Detail: | Mosfet Array N and P-Channel 20V 200mA, 150mA 446m... |
| DataSheet: |  FDY4001CZ Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | PowerTrench® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N and P-Channel |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA, 150mA |
| Rds On (Max) @ Id, Vgs: | 5 Ohm @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 1.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 10V |
| Power - Max: | 446mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-563, SOT-666 |
| Supplier Device Package: | SC-89-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDY4001CZ is a field effect transistor array that is designed to be used in a variety of applications. It features eight Avalanche-resistant PMOSFETs with individually adjustable thresholds, allowing for a wide range of applications and making it extremely versatile. This is a valuable component for those developing discrete power solutions.
The FDY4001CZ is a PMOSFET array with eight individually adjustable Avalanche-resistant MOSFETs in a single package. Each transistor has its own adjustable control voltage and drain current range, allowing for a wide range of applications and enabling extremely versatile power solutions. Each transistor also features an adjustable gate-source voltage and an ultra-low input capacitance to minimize switching losses.
The FDY4001CZ is designed to be used in applications such as power supplies and converters, data systems, and high-speed communication applications. Its wide range of applications and low gate capacitance make it one of the most versatile solutions available. It is also resistant to Avalanche breakdown and provides excellent switching characteristics with its low source-drain capacitance and high gain.
The FDY4001CZ operates using a unique combination of field-effect transistor (FET) and MOSFET technology. A FET is an active device that operates by controlling the fields generated between the source, drain, and gate connections. The FET is energized by the application of an electric field, which is typically applied to the drain connection. By controlling the electric field, the FET can have its resistance altered, allowing it to be used to amplify, filter, or switch an electrical signal.
MOSFET technology is used to control the electric field generated between the drain and gate connections. The transistor is energized by the application of an electric charge directly to the gate. This technology provides excellent switching characteristics with low gate capacitance and high gain.
The FDY4001CZ is a versatile and powerful component that is ideal for any application requiring field-effect transistors and MOSFETs. It is designed to provide excellent switching characteristics with a wide range of applications, making it a great solution for those looking for discrete power solutions.
The specific data is subject to PDF, and the above content is for reference
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...