Allicdata Part #: | FES8DT/45-ND |
Manufacturer Part#: |
FES8DT/45 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 8A TO220AC |
More Detail: | Diode Standard 200V 8A Through Hole TO-220AC |
DataSheet: | FES8DT/45 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 8A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
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FES8DT/45 Application Field and Working Principle
The FES8DT/45 is a Single Rectifier diode, typically used in automotive and truck applications. This diode has been designed to meet the requirements of stop-start and idle current reduction, which allow for improved fuel economy and reduced emissions. The FES8DT/45 also offers a high performance option for high-voltage applications up to 200V and up to 20A, which ensures reliable operation and long life.
Features of FES8DT/45
- High peak reverse voltage: 200V
- High continuous current: 20A
- Low leakage current (at high temperature): 1uA
- High temperature tolerance: -55°C to +125°C
- Low capacitance: 0.25pF
- Low forward voltage drop: 0.4 V
- High frequency: 100MHz
- Extremely low ESR
- CEC/AEC-Q101 qualified
- AEC-Q101 provided (packaged PDM)
Applications
- Automotive thermal management
- Vehicle climate control systems
- Motor control applications
- Start-stop systems
- Power supply circuits
- LED lighting
- DC-DC converters
- Industrial power supplies
- Audio equipment
Working Principle
The FES8DT/45 is a Single Rectifier diode. It is a three-layer, planar, silicon rectifier. The silicon body of the diode is made of an Anode and a Cathode region, along with an intervening depletion region. When the diode is forward biased, current can flow from the Anode to the Cathode through the doped region. When the diode is reverse biased, current cannot flow from the Anode to the Cathode, denying the free flow of electrons.
The reverse recovery time of the FES8DT/45 is low when compared to other diodes and this favors its use in switching applications. The diode provides very low forward voltage drop and high long-term reliability. It also offers built-in over temperature protection that helps protect against thermal overloads.
The high current rating and low capacitance of the FES8DT/45 make it an excellent option for high-voltage, high-current applications. Its low reverse leakage current and low leakage current also make it suitable for use in both automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FES8FT-E3/45 | Vishay Semic... | 0.36 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FES8AT-E3/45 | Vishay Semic... | 0.37 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
FES8CT-E3/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 8A TO... |
FES8HT-E3/45 | Vishay Semic... | 0.35 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
FES8JT-E3/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 8A TO... |
FES8DT-E3/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 8A TO... |
FES8GT-E3/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 8A TO... |
FES8BT-E3/45 | Vishay Semic... | 0.71 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FES8JTL-7002E3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
FES8JTL-7002HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
FES8ATHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 8A TO2... |
FES8BTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 8A TO... |
FES8CTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 8A TO... |
FES8DTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
FES8FTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 8A TO... |
FES8GTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 8A TO... |
FES8HTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 500V 8A TO... |
FES8JTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
FES8DT/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 8A TO... |
FES8GT/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 8A TO... |
FES8JT/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 8A TO... |
FES8BT-7005HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
FES8CT-5400HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
FES8DT-12HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
FES8GT-5301HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
FES8GT-6HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
FES8JT-13HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
FES8JT-5410HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
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