FES8DT/45 Allicdata Electronics
Allicdata Part #:

FES8DT/45-ND

Manufacturer Part#:

FES8DT/45

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 8A TO220AC
More Detail: Diode Standard 200V 8A Through Hole TO-220AC
DataSheet: FES8DT/45 datasheetFES8DT/45 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Description

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FES8DT/45 Application Field and Working Principle

The FES8DT/45 is a Single Rectifier diode, typically used in automotive and truck applications. This diode has been designed to meet the requirements of stop-start and idle current reduction, which allow for improved fuel economy and reduced emissions. The FES8DT/45 also offers a high performance option for high-voltage applications up to 200V and up to 20A, which ensures reliable operation and long life.

Features of FES8DT/45

  • High peak reverse voltage: 200V
  • High continuous current: 20A
  • Low leakage current (at high temperature): 1uA
  • High temperature tolerance: -55°C to +125°C
  • Low capacitance: 0.25pF
  • Low forward voltage drop: 0.4 V
  • High frequency: 100MHz
  • Extremely low ESR
  • CEC/AEC-Q101 qualified
  • AEC-Q101 provided (packaged PDM)

Applications

  • Automotive thermal management
  • Vehicle climate control systems
  • Motor control applications
  • Start-stop systems
  • Power supply circuits
  • LED lighting
  • DC-DC converters
  • Industrial power supplies
  • Audio equipment

Working Principle

The FES8DT/45 is a Single Rectifier diode. It is a three-layer, planar, silicon rectifier. The silicon body of the diode is made of an Anode and a Cathode region, along with an intervening depletion region. When the diode is forward biased, current can flow from the Anode to the Cathode through the doped region. When the diode is reverse biased, current cannot flow from the Anode to the Cathode, denying the free flow of electrons.

The reverse recovery time of the FES8DT/45 is low when compared to other diodes and this favors its use in switching applications. The diode provides very low forward voltage drop and high long-term reliability. It also offers built-in over temperature protection that helps protect against thermal overloads.

The high current rating and low capacitance of the FES8DT/45 make it an excellent option for high-voltage, high-current applications. Its low reverse leakage current and low leakage current also make it suitable for use in both automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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