FES8JT/45 Allicdata Electronics
Allicdata Part #:

FES8JT/45-ND

Manufacturer Part#:

FES8JT/45

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 8A TO220AC
More Detail: Diode Standard 600V 8A Through Hole TO-220AC
DataSheet: FES8JT/45 datasheetFES8JT/45 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Description

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FES8JT/45 are members of a family of silicon rectifier diodes designed to operate with surface mount technology. They can handle up to 45 amps at a reverse voltage of 8JT (joules-thick). The semiconductor material used for their manufacture is silicon, giving them a high temperature operating range of up to 30 degrees Celsius. They are suitable for use in a wide range of industrial, military and other applications, where reliability, high efficiency and low power loss are of utmost importance.

The FES8JT/45 is a single diode with low forward voltage drop and a reverse recovery time of less than one microsecond. The low forward voltage drop ensures low power dissipation and high efficiency. Its reverse recovery time eliminates electrical overstress (EOS) and its avalanche energy rating allows higher operating temperatures without degrading its performance. Due to the low forward voltage drop and high avalanche energy rating, the FES8JT/45 has been widely used in high-load DC-DC converters, AC-DC converters, switch mode power supplies and power line disturbance suppression.

The working principle of the FES8JT/45 is typified by the principle of rectification. A rectifier diode allows current to flow in one direction only, while blocking the opposite direction. These diodes are usually connected in a sequence, so that the current is only allowed to flow in the desired direction. This effect is achieved by the junction between the n-type and p-type semiconductor material, which acts as a barrier to current flow in the opposite direction. Since the junction between the two materials is relatively adiabatic, the electric field created when a voltage is applied across the junction will cause electric current to flow in the desired direction, creating an electric current.

The FES8JT/45 are also equipped with internal protection such as ESD or electrostatic discharge protection, which helps protect them against damage due to current overloads, voltage surges or EOS. Furthermore, the FES8JT/45 also offer reverse switching capability with a maximum reverse breakdown voltage of 45 volts. This reverse capability helps in protecting the connected load when the FES8JT/45 is subjected to high voltage transients. Furthermore, the FES8JT/45 also offer great heat dissipation, providing thermal limits of up to 180 degrees Celsius.

FES8JT/45 are ideal for a wide range of applications, ranging from automotive to consumer electronics. Their high current and low forward voltage drop properties make them perfect for use in DC-DC converters, AC-DC converters, switch mode power supplies and power line disturbance suppression. Furthermore, their small size makes them ideal for use in high density, space-saving applications such as upconverters, LCD TV power supplies and backlighting inverters.

The specific data is subject to PDF, and the above content is for reference

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