FGB20N60SF Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Field Stop
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	40A
Current - Collector Pulsed (Icm):	60A
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 20A
Power - Max:	208W
Switching Energy:	370µJ (on), 160µJ (off)
Input Type:	Standard
Gate Charge:	65nC
Td (on/off) @ 25°C:	13ns/90ns
Test Condition:	400V, 20A, 10 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK
Base Part Number:	FGB20N60

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Application Field and Working Principle of FGB20N60SF

FGB20N60SF is a single IGBT (Insulated Gate Bipolar Transistor). The high technology of IGBTs enables them to combine the advantages of MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) and bipolar transistors. This new combination makes IGBTs perfect for medium- to high-voltage, low-power applications that require low switching power losses and high reliability.The FGB20N60SF is a high voltage (600V) and high power (20A) IGBT constructed using advanced high voltage technology. It has a reliable low dynamic internal capacitance and a low dynamic gate charge injection, so it is suitable for applications with medium to high power semiconductor devices.The source and drain terminals are short, making the IGBT suitable for applications such as motor drives, inverters, converters, and AC motor control. The FGB20N60SF also has a reverse body diode and a fast reverse recovery time. This feature makes the IGBT ideal for use in regenerative braking applications.The most common application of the FGB20N60SF is in the power electronics field. It is used in motor drives, AC motor control, inverters, and converters. It can also be used in regenerative braking applications, where it can be used to convert the mechanical energy back into electrical energy for reuse or storage.In order to understand how an IGBT works, it is important to first understand how a MOSFET works. A MOSFET is an electrical switch used to control the flow of current through it. It consists of three terminals; the gate, drain, and source. It works by using a gate signal to either turn the device on or off, depending on whether the signal voltage is above or below a certain level.When an IGBT is turned on, current flows from the drain to the source. This creates a magnetic field which pulls the gate voltage closer to the drain voltage. This causes a bipolar junction transistor (BJT) to turn on, allowing current to flow through it. This causes the IGBT to turn on, allowing a current to flow from the source to the drain.When the IGBT is turned off, the BJT is also turned off, preventing current from flowing through it. This causes the IGBT to turn off and prevent current from flowing through it. The FGB20N60SF IGBT has a fast reverse-recovery time and an inherently low dynamic gate charge injection, so it is ideal for applications with high-speed switching requirements.FGB20N60SF IGBTs are designed to provide high levels of power handling and reliable performance. They feature low dynamic gate charge injection, as well as a fast reverse recovery time, making them suitable for high-power applications. Additionally, the FGB20N60SF IGBTs have a long lifetime and are relatively resistant to heat and EMI.In conclusion, FGB20N60SF IGBTs are perfect for medium- to high-voltage, low-power applications that require low switching power losses and high reliability. The fast reverse recovery time, low dynamic gate charge injection, and long lifetime make the FGB20N60SF an ideal choice for power electronics applications.

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