FGB20N6S2 Discrete Semiconductor Products

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An insulated-gate bipolar transistor (IGBT) is a type of transistor that combines the features of field-effect transistors (FETs) and bipolar junction transistors (BJTs). This type of transistor finds its applications in the area of power control and switching. The FGB20N6S2 is an IGBT that is widely used in various applications. In this article, we will look at the different characteristics of this device and its various application fields. We will also look at the working principle of this transistor.

Structure of FGB20N6S2

The FGB20N6S2 belongs to the FGB20N6 family of IGBTs. It has an N-channel, insulated-gate bipolar transistor structure. It is a 6 amps, 600 Volts IGBT with a gate size of 0.370 inch (minimum). It has a built-in anti-parallel diode on its base, which allows fast switching and enhances the current capacity. It also has an increase of 30% to 40% in the forward current compared to the conventional IGBTs. The overall size of this transistor is 56 mm by 56 mm meaning it is easy to install. The frequency of switching can go up to 50 kHz.

Application Fields of FGB20N6S2

The FGB20N6S2 device can be used in many different applications. These include automotive electronics, solar inverters, Uninterruptible Power Supplies, traction converters and of course all kinds of switching applications. Its insulated gate allows it to be used as a switch between power circuits. It is also used in motor control systems as it can provide high current with low switching losses. In addition, it is used in applications that require high reliability and low EMI (electromagnetic interference).

Working Principle of FGB20N6S2

The operation of an IGBT is based on the principle of closed loop gain. In an IGBT, current flows between the collector and emitter terminals, while the gate terminal controls the current flow via the collector-base junction. A voltage applied to the gate terminal of the transistor influences the charge near the emitter-collector junction, which in turn changes the current flow between the emitter and collector terminals. When a forward voltage is applied to the gate terminal, this turns the transistor on and current flows between the emitter and collector terminals. When a reverse voltage is applied, the current is shut off, providing a high impedance between the two terminals.

Conclusion

The FGB20N6S2 is a popular IGBT device that is found in many different applications. Its insulated gate provides high current and low switching loss, which makes it an ideal choice for motor control systems. In addition, its gate size is small enough for easy installation, and its switching frequencies can go up to 50 kHz. The working principle of this IGBT device is based on the principle of closed loop gain, with the gate voltage controlling the current flow between the emitter and collector terminals.

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