FGB20N60SFD Discrete Semiconductor Products

Switching Energy:	370µJ (on), 160µJ (off)
Base Part Number:	FGB20N60
Supplier Device Package:	D²PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	34ns
Test Condition:	400V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C:	13ns/90ns
Gate Charge:	65nC
Input Type:	Standard
Series:	--
Power - Max:	208W
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 20A
Current - Collector Pulsed (Icm):	60A
Current - Collector (Ic) (Max):	40A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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The FGB20N60SFD is a type of insulated-gate bipolar transistor (IGBT), more commonly known as a single-chip IGBT. It is designed for high current, high speed switch power supply applications, and is particularly suited for automation and motor control. The FGB20N60SFD offers low gate threshold switching VOLTages (VGSth) and fast turn-on times (di/dt) for improved efficiency. It is also able to tolerate high temperature and current levels, making it suitable for a wide range of industrial and automotive applications.The FGB20N60SFD is used in applications ranging from power generation and transmission, to industrial and automotive applications. It is typically used in applications requiring higher levels of performance such as automated starting, switching and control of motors. In these applications, the FGB20N60SFD has a number of advantages over other types of transistors, such as lower gate threshold voltage, higher speed, and improved current density.The FGB20N60SFD is also used in power switching applications such as power rectification, inrush current limiting, and DC-DC converters. The ability to handle higher currents and a wide range of operating temperatures makes the FGB20N60SFD an ideal choice for a variety of power management solutions.The general operating principle of the FGB20N60SFD is based on the traditional MOSFET transistor concept. It utilizes an insulated-gate (IG) layer which, in the presence of a controlling voltage, creates a conducting channel between the Drain and Source terminals, resulting in current flow. When the specified voltage across the gate and drain is exceeded, the current drops to zero and the device stops conducting.The FGB20N60SFD is an N-channel device with a breakdown voltage of 600V, collector current of 50A, and gain of 40V/uA. To achieve fast switching, it employs an "anti-parallel diode" built into the package to absorb the reverse current, eliminating the need for an external diode. Additionally, the FGB20N60SFD features low on-state voltage and low power dissipation, reducing the total system power consumption, and supports a wide temperature range of -40°C to 175°C.In conclusion, the FGB20N60SFD is an ideal choice for a range of switch power supply applications. It offers low gate threshold VOLTages (VGSth) and fast turn-on times (di/dt), allowing for improved efficiency and power management solutions. This device is capable of handling high currents and a wide temperature range, making it suitable for use in a variety of industrial and automotive applications.

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