FGB20N6S2D Discrete Semiconductor Products

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An insulated-gate bipolar transistor (IGBT) is a semiconductor device that is widely used in many different applicactions. The FGB20N6S2D is one type of IGBT that has been gaining popularity in recent years due to its impressive capabilities. This article will discuss the various application fields and working principles of the FGB20N6S2D.

Application Field of FGB20N6S2D

The FGB20N6S2D is typically used in Intelligent Power Modules (IPM) due to its optimized switching performance characteristics. In an intelligent power module, the FGB20N6S2D is used to control large currents such as those encountered in the motor control and automation fields. The FGB20N6S2D also has impressive resistance to short circuit current, which makes it a suitable choice in harsh electrical environments. In addition, it can be used in various different high-frequency applications such as UPS systems, motor drives, solar inverters, etc.

The main feature of the FGB20N6S2D is its optimized switching performance. It has a fast response time and high current density, making it well suited for applications requiring high switching frequencies. The FGB20N6S2D also has excellent thermal stability, allowing it to handle high temperatures without compromising its performance. For example, the device can handle switching surges up to 1200A without any issues.

Furthermore, the FGB20N6S2D is one of the few IGBTs that is also capable of supporting high voltage applications. It can handle voltages up to 1700V without any compromise in performance. This makes the FGB20N6S2D the ideal choice for applications such as boost converters, PFC circuits, and high voltage power switching.

Working Principle of FGB20N6S2D

The FGB20N6S2D consists of two main components: an insulated-gate bipolar transistor (IGBT) and a diode. The IGBT consists of an emitter, collector, and gate, which are connected to one another to form a three-terminal device. The gate acts as an electrical switch, allowing the current to flow between the collector and emitter. The diode acts as a protection device, preventing any reverse current from flowing.

When the gate voltage is negative, the FGB20N6S2D operates in the "on" state. This allows current to flow between the collector and emitter. As the gate voltage becomes positive, the FGB20N6S2D operates in the "off" state, preventing current from flowing. The FGB20N6S2D also has a built-in surge protection device, which ensures that the device remains in the off state even during high voltage surges. This provides the device with an additional level of protection.

The FGB20N6S2D has an impressive standoff voltage of 1700V, which is one of the highest in the industry. This makes it extremely reliable and durable, even in extreme conditions. Furthermore, the device has a high operating temperature range of up to 150°C. This allows the device to handle prolonged periods of high current storage and/or high-temperature operation.

Conclusion

The FGB20N6S2D is a powerful IGBT that has been gaining popularity due to its impressive capabilities. It is typically used in IPMs due to its optimized switching performance characteristics, as well as its high resistance to short circuit current. In addition, it has a wide variety of applications including motor control, energy conversion, and high-frequency switching, among others. Finally, it has a very high operating temperature range and a high standoff voltage, making it a reliable and durable device.

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