FGH20N60SFDTU

Defined as insulated-gate bipolar transistors (IGBTs), FGH20N60SFDTU belong to a category of transistors that combine the best characteristics of MOSFETs (Metal Oxide Semiconductor FETs) and BJTs (Bipolar Junction Transistors). IGBTs provide efficient, low-distortion, solid-state switching applications in high-power applications with low gate-drive demands.

The FGH20N60SFDTU IGBT has a maximum continuous collector current of 20A, a collector-emitter voltage of 600V, a collector-emitter saturation voltage of 0.9V at 100A, and an avalanche energy of 640mJ at 25A. It also has an isolation voltage of 1.5kV and a maximum power dissipation at 25℃ of 107W.

Applications for the FGH20N60SFDTU IGBT can include switching applications that require good efficiency, low distortion, and a broad range of gate drive demands. This type of transistor is typically found in power electronic convertors, such as switching power supply, AC/DC converters, solar inverters, and motor drives.

The working principle of the FGH20N60SFDTU IGBT is similar to that of an MOSFET or a BJT. When the gate voltage (Vgs) is applied, it charges the gate oxide layer and creates a conducting channel, allowing current to flow between source and drain. This process is called pinch-off, as the conducting channel is "pinched-off". When the gate emitter voltage is turned off, the current ceases and the device is in the "off-state".

In comparison to a BJT, an IGBT has a much lower gate drive current requirement which significantly improves efficiency. The IGBT is often used as a switching device in high power applications where it can provide much higher current at lower gate voltages than traditional BJTs.

In summary, the FGH20N60SFDTU IGBT provides efficient switching applications in high-power applications with low gate-drive demands. It is suitable for applications such as power electronic convertors and motor drives, and its working principle combines the advantages of MOSFETs and BJTs.