Allicdata Part #: | FGH20N6S2-ND |
Manufacturer Part#: |
FGH20N6S2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 28A 125W TO247 |
More Detail: | IGBT 600V 28A 125W Through Hole TO-247-3 |
DataSheet: | FGH20N6S2 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 125W |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 390V, 7A, 25 Ohm, 15V |
Td (on/off) @ 25°C: | 7.7ns/87ns |
Gate Charge: | 30nC |
Input Type: | Standard |
Switching Energy: | 25µJ (on), 58µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 7A |
Current - Collector Pulsed (Icm): | 40A |
Current - Collector (Ic) (Max): | 28A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Integrated gate-commutated thyristors (IGBTs) are among the most popular types of power transistors. They are typically used in applications where adjustable or high-power switching is needed, such as motor control, power supplies, and UPS systems. The FGH20N6S2 is a one of the most common IGBTs and can be used in a wide range of applications from 3.9 amps to 4.0 amps.
The FGH20N6S2 is a single IGBT transistor with a forward voltage drop of 2500 mV and a current rating of 4.0A. It is designed to switch electronic loads with a power rating up to 200W. It is constructed using high-performance insulated gate bipolar transistors (IGBTs) and has an integrated gate charge driver. It features an internal thermal shutdown protection mechanism which is triggered when the internal temperature of the transistor reaches a certain threshold. The FGH20N6S2 also has a built-in snubber circuit which reduces EMI and further reduces switching losses.
The FGH20N6S2 is mainly used as a power switching device in various switch-mode power supply architectures. It has a generally low dropout voltage, which makes it suitable for a wide range of input voltages. It can be configured as an ideal diode bridge or a pseudo-diode bridge, depending on the specific application. It is often used to regulate the current in AC systems, as well as in low-power DC and AC motor drives. The FGH20N6S2 can also be used for snubber and output clamping applications, as well as for voltage regulation in DC-DC converters.
The FGH20N6S2 works by using a built-in driver circuit to keep the gate voltage of the IGBT above a given threshold. This drives the IGBT into conduction when the signal on the gate pin is high, allowing current to flow between the collector and emitter of the transistor. By controlling the gate voltage, the current can be accurately regulated. When the signal on the gate pin is low, the IGBT is switched off, preventing the current flow between the collector and emitter. The threshold voltage and current limit can be adjusted using the built-in snubber, allowing for more precise control of the current.
The FGH20N6S2 is an ideal transistor for applications that require adjustable or high-power switching. It is an efficient and reliable choice for a variety of applications, from AC/DC motor drives to snubber and output clamping circuits. It is also easy to configure and provides protection against destructive overcurrents. The FGH20N6S2 is a great choice for those looking for a robust and reliable IGBT for their power switch applications.
The specific data is subject to PDF, and the above content is for reference
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