Allicdata Part #: | FGH20N6S2D-ND |
Manufacturer Part#: |
FGH20N6S2D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 28A 125W TO247 |
More Detail: | IGBT 600V 28A 125W Through Hole TO-247-3 |
DataSheet: | FGH20N6S2D Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Power - Max: | 125W |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 31ns |
Test Condition: | 390V, 7A, 25 Ohm, 15V |
Td (on/off) @ 25°C: | 7.7ns/87ns |
Gate Charge: | 30nC |
Input Type: | Standard |
Switching Energy: | 25µJ (on), 58µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 7A |
Current - Collector Pulsed (Icm): | 40A |
Current - Collector (Ic) (Max): | 28A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FGH20N6S2D is a single IGBT designed for use in industrial applications. This device is optimized for low-loss, low-voltage operation and has a gate impedance low enough for easy drive. It is designed for use in switching power converters for electric motor drive, home appliances, OBC motors and other applications. An IGBT is an Insulated Gate Bipolar Transistor and is usually used in high-power switching applications. It combines the best features of both bipolar and MOSFET transistors and has a relatively low on-state voltage drop. They offer lower conduction losses than MOSFETs and hence higher efficiency than MOSFETs. The FGH20N6S2D IGBT has a very low gate voltage requirement making it suitable for industrial applications.The FGH20N6S2D is designed to operate at a maximum current of 20 Amps, making it suitable for applications with high output current demands. It has an avalanche-rated power dissipation of 400 Watts, making it an ideal choice for high-power industrial applications. It also has a minimum breakdown voltage of 600V, which gives it a high tolerance for overloads and surges. The maximum collector-emitter voltage is 1200V, making it suitable for operation at high voltages. The working principle of the FGH20N6S2D is based on the phenomenon of avalanche breakdown. When the base-emitter junction of the IGBT is forward biased, the voltage across it increases until it reaches its avalanche breakdown voltage, which is the voltage at which current will flow. This voltage is a direct result of how strongly the two layers of the transistor are attracted to each other. Once this voltage is reached, the IGBT turns on and current will flow from the collector to the emitter. The major advantage of this IGBT over other technologies is that it can switch very quickly and with very little power consumption. This is because once the voltage reaches its avalanche breakdown voltage, the device does not need to be further activated by a gate signal. This makes it ideal for applications where response time and power efficiency are critical. Overall, the FGH20N6S2D is an ideal choice for applications that require high power and efficiency, such as motor drives and home appliances. Its low gate voltage requirement and high avalanche voltage make it suitable for both low-power and high-power applications. It has a low on-state voltage drop and a high tolerance for overloads and surges, which makes it ideal for industrial applications. Its fast switching time and low power consumption make it a great choice for fast-response, high-efficiency applications.
The specific data is subject to PDF, and the above content is for reference
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