FGH25N120FTDS

Power - Max:	313W
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	535ns
Test Condition:	600V, 25A, 10 Ohm, 15V
Td (on/off) @ 25°C:	26ns/151ns
Gate Charge:	169nC
Input Type:	Standard
Switching Energy:	1.42mJ (on), 1.16mJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 25A
Current - Collector Pulsed (Icm):	75A
Current - Collector (Ic) (Max):	50A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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The FGH25N120FTDS IGBT (Insulated Gate Bipolar Transistor) is a single device that is widely used in a variety of everyday industrial applications. It is a power semiconductor that combines the switching speed of a transistor with the low conduction loss of a MOSFET. The FGH25N120FTDS is typically used in power supplies and motor control systems, among other applications.This device has a unique combination of features that make it very attractive for use in industrial applications. In terms of performance, it has a blocking voltage of 1200 V, a continuous collector current of up to 25 A, and a gate-to-emitter voltage of 5.5 V. Its maximum current gain is 1000, and it has a nominal output capacitance of about 0.4 pF. All of these features combined make the FGH25N120FTDS an ideal choice for applications that require strong current carrying capacity and high-speed switching.The device is based on the MOSFET structure, which has an insulated gate at the center of the transistor. This gate is typically made of a heavily-doped material that has an electric field around it, allowing it to control the flow of electrons through the channel. This control allows the MOSFET to act like an on/off switch, allowing or preventing current flow, depending on the gate voltage.The insulated gate in the FGH25N120FTDS has a voltage threshold of 5.5 V. This allows it to operate only when sufficient voltage is applied to the gate. Once the gate voltage is above the threshold, the IGBT opens, allowing the current to flow through the device, and the voltage drop across the IGBT is about 1-2V. When the gate voltage is lowered to below the threshold, the IGBT shuts off, preventing current from flowing through it.The FGH25N120FTDS also has several additional features that make it attractive for industrial applications. For example, it has a very fast switching speed and can switch from an off to on state in a few nanoseconds. This makes it ideal for applications that need to switch rapidly, such as power supplies and inverters. In addition, it has a low reverse-recovery current, meaning that the current will not stay high in the event of a power outage or other event that causes the voltage to suddenly drop.Overall, the FGH25N120FTDS IGBT is a versatile device that is used in a wide variety of industrial applications. Its combination of features, including its high-speed switching ability, low conduction losses, and low reverse-recovery current, make it an ideal choice for high-power applications that need reliable and fast switching.

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