FGH30N120FTDTU Discrete Semiconductor Products |
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Allicdata Part #: | FGH30N120FTDTU-ND |
Manufacturer Part#: |
FGH30N120FTDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 60A 339W TO247 |
More Detail: | IGBT Trench Field Stop 1200V 60A 339W Through Hole... |
DataSheet: | FGH30N120FTDTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 339W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 730ns |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Gate Charge: | 208nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 90A |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FGH30N120FTDTU is a single IGBT with excellent performance characteristics, making it suitable for a range of applications. It offers high power handling capability and low losses at high frequencies, for the most challenging power signals in equipment and systems. This IGBT offers a high status of safety and reliability at all temperatures, making it suitable for high temperature, high power applications. In addition, its low parasitic capacitance minimizes switching losses and enhances efficiency.
An IGBT is an insulated gate bipolar transistor (IGBT) and is a bridge between the power MOSFET and bipolar junction transistor (BJT). They share features of both BJTs and MOSFETs and operate by using a gate to control the electrical current flowing through the device. In contrast to BJTs, IGBTs are optimized for low current applications, capable of handling much larger currents than other comparable devices. Similarly, in comparison to MOSFETs, IGBTs have a much higher voltage capability.
The FGH30N120FTDTU IGBT isdesigned for applications from 60V to 1200V and it offers high power capability with low losses at high frequencies. It offers single, dual and three phase configurations, up to 120amps and 65A/600V. This IGBT can operate at temperatures up to 200°C, making it suitable for high temperature and high power applications. It also features maximum repetitive peak reverse voltage (MRV) of up to 5 kV, making it well suited for many types of harsh environments. Its low on-state and switching losses reduce heat dissipation and overall power consumption.
The FGH30N120FTDTU IGBT has a wide range of applications and can be used in many commercial and industrial operations. It is suitable for use in the automotive industry, including electric vehicles, electric drives, powertrain and power management systems. In addition, it can be used in a variety of industrial applications, such as electric motors, welding, power supplies, UPS systems, renewable energy, and other medium and high power applications.
FGH30N120FTDTU IGBTs are also used in many motor control systems. Due to their high current carrying capabilities, they are ideal for motor speeds, drivetrain transmissions systems and any other product that requires electrical current control with fast switching capabilities. IGBTs are also used in HVAC systems for precise control of current and to increase efficiency.
The FGH30N120FTDTU IGBT is designed to provide low switching losses, which enables higher system efficiency. When the gate voltage is applied an electric field is created around the device, which causes carriers to move between a conduction and blocking state as required. This allows current to flow in only one direction, allowing precision control of current flow and enabling switching on and off of current flow when needed.
In addition, IGBTs offer isolation between the gate and source potentials, enhancing safety for operation in high voltage and high power applications. The gate oxides used in IGBTs also provide protection from damage caused by ESD, thermal runaway and short circuits, further enhancing the safety and reliability of the device.
FGH30N120FTDTU IGBTs are an excellent choice for a variety of applications. They offer high power handling capabilities, low losses at high frequency and very low switching times, making them suitable for many industrial and commercial applications. Their high temperature and voltage ratings make them suitable for harsh environments, while their low on-state and switching losses minimize heat dissipation and overall power consumption. Finally, the gate oxides used in them also provide protection from ESD, thermal runaway and short circuiting, enhancing the safety and reliability of the device.
The specific data is subject to PDF, and the above content is for reference
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