FGH30S130P Discrete Semiconductor Products

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	1300V
Current - Collector (Ic) (Max):	60A
Current - Collector Pulsed (Icm):	90A
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 30A
Power - Max:	500W
Switching Energy:	--
Input Type:	Standard
Gate Charge:	78nC
Td (on/off) @ 25°C:	--
Test Condition:	--
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

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Introduction

FGH30S130P is a type of single insulated gate bipolar transistor (IGBT), a type of transistor most commonly used for electronics applications, including circuit control, power amplification, and signal switching. FGH30S130P has the standard package of an IGBT, a metal-oxide-semiconductor field-effect transistor (MOSFET). The metal oxide semiconductor structure makes the FGH30S130P highly robust and reliable. FGH30S130P is capable of withstanding high voltages, up to 350 V, and is suitable for medium- and high-power applications.

Application Field

FGH30S130P is mainly used for power electronics applications, including uninterruptible power supplies (UPSs), adjustable-frequency drives (AFDs), high-performance inverters, motor drives, and power currents switching, among many other superior features. Unlike other IGBTs, FGH30S130P offers low on-resistance and gate charge, thus making it suitable for applications that involve high thermal load, such as electric vehicles. Moreover, it can achieve high-speed switching due to its internal short-circuit protection.FGH30S130P is also used in AC motor drives and other systems that involve high-power switching, as it can handle a maximum power of 131 A at a high voltage applications. Furthermore, FGH30S130P is used in various motor control systems due to its low power loss and high switching frequency.

Working Principle

FGH30S130P works on the basic principle of the gate voltage controlling the flow of electrons in the transistor through the gate-drain-source (GDS) structure. The input voltage\'s conduction in this structure creates an output current which is proportional to the applied gate voltage. Hence, the Mosfet forms the basic electrical circuit in an IGBT.A bipolar junction-transistor(BJT) is also present in FGH30S130P. It consists of two terminals, the base and the collector, and provides the input signal to the gate of an FGH30S130P so as to turn it ON and OFF depending on the polarity of the input signal. It also helps in the self-protection of the IGBT from possible damage.The FGH30S130P exhibits fast switching speed due to the low gate charge and low Miller capacitance of the IGBT. The low Miller capacitance allows for faster switching due to the reduced charge collection time on the gate oxide layer. In addition to the low gate charge, FGH30S130P also exhibits superior thermal performance due to its metal-oxide-semiconductor structure. The metal-oxide-semiconductor structure helps reduce the thermal runaway effect while improving the IGBT\'s breakdown capability.

Conclusion

In conclusion, FGH30S130P is an ideal single IGBT for medium- and high-power applications due to its robustness, reliable performance, and superior thermal capability. It is suitable for applications involving electric vehicles, AC motor drives, UPS systems, and high-power switching. Furthermore, FGH30S130P is capable of handling high voltages of up to 350 V, and has a maximum current output of 131 A. Its gate charge and Miller capacitance helps to attain high-speed switching, and its metal-oxide-semiconductor structure helps reduce the thermal runaway effect and improve the IGBT\'s breakdown capability.

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