FGH30N6S2D Discrete Semiconductor Products

Power - Max:	167W
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	46ns
Test Condition:	390V, 12A, 10 Ohm, 15V
Td (on/off) @ 25°C:	6ns/40ns
Gate Charge:	23nC
Input Type:	Standard
Switching Energy:	55µJ (on), 100µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 12A
Current - Collector Pulsed (Icm):	108A
Current - Collector (Ic) (Max):	45A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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FGH30N6S2D Application field and Working Principle

Introduction

The FGH30N6S2D is a high-speed, high-voltage IGBT that provides low gate charge and excellent switching characteristics. This product is capable of delivering power of up to 60 volts up to 1500 amperes and switching frequencies of up to 10kHz. It\'s suitable for switching applications that require high speed and high performance, such as motor drive systems, pulse width modulation (PWM) controllers, and uninterruptible power supplies (UPS).

Features

The FGH30N6S2D features wide bandgap (WBG) technology, which allows it to operate effectively at high voltage and temperature ranges. It also offers superior temperature rise compared to other IGBTs, making it preferable for high power applications. Additionally, the fast switching speed of the FGH30N6S2D ensures that it minimizes losses during the conduction processes. It also provides low gate charge and switching losses, helping to reduce overall system costs.

Applications

Due to its high power throughput and wide temperature range, the FGH30N6S2D can be used in a variety of applications. It\'s particularly suitable for motor drive systems and PWM controllers, where switching losses must be minimized and a high level of performance is needed. It can also be used in uninterruptible power supplies (UPS) to ensure a reliable source of power. Additionally, its wide temperature range makes it well suited for control systems under harsh environmental conditions.

Working Principle

The FGH30N6S2D is a field-effect transistor (FET) based IGBT that works using the principle of minority carrier injection. This product offers superior switching performance compared to conventional bipolar junction transistors (BJTs), as it eliminates the need for base current. An insulated gate is used to control current flow between an emitter and a collector. When a voltage is applied to the gate, it creates a channel between the collector and the emitter, allowing current to flow. Conversely, when the voltage applied to the gate is removed, the channel is blocked, preventing the flow of current.

Conclusion

The FGH30N6S2D is a high-performance IGBT that is ideal for high power applications such as motor drives, PWM controllers, and uninterruptible power supplies. Its wide bandgap technology allows it to operate at high voltages and temperatures, while its fast switching times help reduce power losses. Additionally, its low gate charge and switching losses can help reduce overall system costs. Overall, the FGH30N6S2D is a highly reliable product that can be used in a variety of demanding applications.

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