FGH30N60LSDTU Discrete Semiconductor Products

Power - Max:	480W
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	35ns
Test Condition:	400V, 30A, 6.8 Ohm, 15V
Td (on/off) @ 25°C:	18ns/250ns
Gate Charge:	225nC
Input Type:	Standard
Switching Energy:	1.1mJ (on), 21mJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	1.4V @ 15V, 30A
Current - Collector Pulsed (Icm):	90A
Current - Collector (Ic) (Max):	60A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

<div><p>The <strong>FGH30N60LSDTU</strong> is an insulated gate bipolar transistor (IGBT) that is widely used in various electrical and electronic applications. This IGBT is from the single-channel series, and its high power ratings and low inductance design make it an ideal choice for many applications. In this article, we will discuss the applications of the FGH30N60LSDTU IGBT and its working principle.</p><p><strong>Application Field:</strong></p><p>The FGH30N60LSDTU IGBT is a power device that is suitable for a wide range of applications. It is used in drives, motor control, uninterruptible power supplies, welding, photovoltaic inverters and 3-phase motor drives. In addition, it can be used in AC/DC converters, DC/DC converters and AC/AC inverters. It is also suitable for high-power switching, as well as high-frequency applications.</p><p><strong>Working Principle:</strong></p><p>The FGH30N60LSDTU IGBT operates on a principle similar to the one used in conventional power MOSFETs. It features a fast switching speed and a low gate drive voltage, thus allowing higher power densities and performance compared to MOSFETs. It also features a low on-state voltage drop that helps reduce power dissipation and improves efficiency.</p><p>The FGH30N60LSDTU IGBT has a bottom-gate structure, which helps reduce parasitic inductance and improve device characteristics. It is designed with a shielded emitter structure, which helps lower electromagnetic pollution. It also features a low saturation voltage and a very low leakage current. These features make the FGH30N60LSDTU IGBT ideal for high-frequency applications such as electric welding and high-power switching.</p><p>The FGH30N60LSDTU IGBT also has a thermal design that allows it to dissipate heat efficiently. It is also designed with an integrated gate drive, which makes it easy to use and eliminates the need for external gate drive circuitry. This also helps reduce system cost and complexity.</p><p>In conclusion, the FGH30N60LSDTU IGBT is a high-performance, low-inductance device ideal for many applications, including drives, motor control, uninterruptible power supplies, welding, photovoltaic inverters and 3-phase motor drives. It is also used in AC/DC converters, DC/DC converters, and AC/AC inverters. Its fast switching speed and low gate drive voltage make it an excellent choice for high-power switching and high-frequency applications.</p></div>

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description