Allicdata Part #: | FGH60N60SFDTU-ND |
Manufacturer Part#: |
FGH60N60SFDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 120A 378W TO247 |
More Detail: | IGBT Field Stop 600V 120A 378W Through Hole TO-247 |
DataSheet: | FGH60N60SFDTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Switching Energy: | 1.79mJ (on), 670µJ (off) |
Base Part Number: | FGH60N60 |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 47ns |
Test Condition: | 400V, 60A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 22ns/134ns |
Gate Charge: | 198nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 378W |
Vce(on) (Max) @ Vge, Ic: | 2.9V @ 15V, 60A |
Current - Collector Pulsed (Icm): | 180A |
Current - Collector (Ic) (Max): | 120A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The FGH60N60SFDTU, better known as a N-channel insulated gate bipolar transistor (IGBT), is a type of transistor used in a variety of power electronics applications such as motor control and power conversion. This IGBT offers improved performance over traditional MOSFETs due to its higher breakdown voltage and lower on-resistance.
An IGBT is a diode-transistor hybrid that combines the power gain of a BJT with the effective switching of a FET. By combining two devices into a single component, the IGBT offers benefits such as higher current capability and faster switching speeds. Additionally, IGBTs are more efficient than MOSFETs and other transistors, as they consume less power during operation and minimize power losses.
The FGH60N60SFDTU is a N-channel discrete IGBT with an integrated anti-parallel diode and built-in temperature protection. It has an operating current of 60A and a maximum collector-emitter voltage of 600V. It is well suited for applications such as solar inverters, motor control, UPS systems, and other inverter-based systems.
The FGH60N60SFDTU works by using the voltage applied to its gate to control the flow of current from its source to its drain. When the drain-source voltage is applied, the gate is opened and current flows from the source to the drain. When the gate voltage is removed, the drain-source voltage is blocked and the current flow is prevented. This switching action allows for the very efficient control of power transfer in an application.
The FGH60N60SFDTU is well suited for applications such as motor control, power converters, AC and DC motor drives, solar inverters, UPS systems, and more. It is highly reliable and offers low on-state and switching losses, making it ideal for efficient power transfer. It is also capable of high-speed switching and its low gate-drive voltage makes it suitable for low-voltage applications. Additionally, its temperature protection feature makes it resistant to thermal runaway in vulnerable applications.
In conclusion, the FGH60N60SFDTU is an excellent choice for power electronics applications, as it offers improved performance and more efficient operations than traditional MOSFETs. It provides an effective way to control power transfer in applications such as motor control, power conversion, AC and DC motor drives, solar inverters, and UPS systems. The device is highly reliable, efficient, and capable of high-speed switching. Additionally, its low gate-drive voltage and built-in temperature protection make it suitable for low-voltage applications and those vulnerable to thermal runaway.
The specific data is subject to PDF, and the above content is for reference
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