Allicdata Part #: | FGH60N60UFDTU-ND |
Manufacturer Part#: |
FGH60N60UFDTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 120A 298W TO247 |
More Detail: | IGBT Field Stop 600V 120A 298W Through Hole TO-247 |
DataSheet: | FGH60N60UFDTU Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Switching Energy: | 1.81mJ (on), 810µJ (off) |
Base Part Number: | FGH60N60 |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 47ns |
Test Condition: | 400V, 60A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 23ns/130ns |
Gate Charge: | 188nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 298W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 60A |
Current - Collector Pulsed (Icm): | 180A |
Current - Collector (Ic) (Max): | 120A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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Application Field and Working Principle of FGH60N60UFDTU
FGH60N60UFDTU is a single insulated gate bipolar transistor (IGBT), which will be studied in the context of its application fields and working principle. It is a general-purpose transistor that can be applied in many fields due to one of its most beneficial features, which is a low on-state voltage drop.
Application Fields
FGH60N60UFDTU transistors are able to be applied in a quite broad range of application fields. This transistor can be readily found in the fields of controlling machine tools, industrial drives, home appliances, uninterruptible power supplies and many other field applications. Moreover, it is also utilized for the purpose of power supplies in electric drive applications, such as in HVAC systems, not only because of the above stated low on-state voltage drop, but also because of the low conduction losses.
Working Principle
The working principle of this type of transistor is based on the concept of using an insulated gate as its control element, which then adjusts the shape of the current between the emitter and collector.The insulated gate is then biased using a signal voltage, which allows current to be switched on and off when a need arises. The amount of current may be adjusted with the signal voltage and will then be depending on the magnitude of the signal voltage. The signal voltage magnitude dictates the rate of current flow through the transistor.
In addition to adjustment of current by the control element, the transistor can also be used to perform voltage regulation and voltage amplification. The voltage amplification is achieved by leveraging the transistor’s ability to separate a higher voltage signal from a lower voltage signal. Furthermore, the on-state voltage drop of the transistor helps in regulated control of the output voltage, enabling it to be kept almost constant.
Conclusion
In conclusion, FGH60N60UFDTU transistors are widely applied in various fields, such as power supplies and controlling machine tools, due to its beneficial features, including a low on-state voltage drop and low conduction losses. Furthermore, its working principles of current adjustment and voltage regulation/amplification enable the FGH60N60UFDTU transistor to be widely used for those purposes.
The specific data is subject to PDF, and the above content is for reference
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FGH60N60UFDTU | ON Semicondu... | -- | 1000 | IGBT 600V 120A 298W TO247... |
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