Allicdata Part #: | FGH60N60SMD-ND |
Manufacturer Part#: |
FGH60N60SMD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 120A 600W TO247 |
More Detail: | IGBT Field Stop 600V 120A 600W Through Hole TO-247... |
DataSheet: | FGH60N60SMD Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Switching Energy: | 1.26mJ (on), 450µJ (off) |
Base Part Number: | FGH60N60 |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 39ns |
Test Condition: | 400V, 60A, 3 Ohm, 15V |
Td (on/off) @ 25°C: | 18ns/104ns |
Gate Charge: | 189nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 600W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 60A |
Current - Collector Pulsed (Icm): | 180A |
Current - Collector (Ic) (Max): | 120A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The FGH60N60SMD is a WideBand Gap IGBT (Insulated Gate Bipolar Transistor) module that provides increased performance and efficiencies in certain applications. The FGH60N60SMD has been designed for use in power conversion systems, such as motor control systems, inverters and high-frequency switching applications.
The FGH60N60SMD offers numerous advantages over standard IGBT modules in terms of power handling, frequency response and thermal management. Its high thermal resistance allows for an integrated heat sink which increases power handling capability and helps in reducing system power losses. Due to the improved frequency response and the high short-circuit robustness, the FGH60N60SMD is particularly suited for switching applications at high frequencies. Furthermore, the use of wideBand Gap materials enables the FGH60N60SMD to operate at higher junction temperatures, which improves system reliability.
The FGH60N60SMD also offers improved protection methods. Its integrated protection circuit provides protection against over-voltage, over-current and over-temperature conditions. Its integrated fault detection circuit helps in detecting the most common faults and allows for increased system diagnostics. The FGH60N60SMD also offers reduced EMI (Electromagnetic Interference) through optimized layout techniques.
The working principle of the FGH60N60SMD is based on the quasi-complementary IGBT technology. This allows for a low conduction loss and low switching losses. When a gate potential is applied, the internal gate circuit modulates the current flowing through the IGBT\'s channel from its take-off to its cut-off state. The result is a short-circuit protected IGBT that can be used to generate a clean switch from its take-off state to its cut-off state. The current can be controlled with regards to its magnitude, frequency and phase for optimal efficiency.
Depending on the particular application, the FGH60N60SMD can be used in various solutions. In motor control applications, the FGH60N60SMD can be used to produce high-precision switches of current or voltage in order to drive the motor. In inverter applications, the FGH60N60SMD can be used to rapidly switch alternating currents, allowing for improved power efficiency and reliability. In high-frequency switching applications, the FGH60N60SMD can be used to switch large currents in high-frequency modulation modes.
In summary, the FGH60N60SMD is a WideBand Gap IGBT module that offers increased performance and efficiencies, higher thermal resistance, improved frequency response, improved protection schemes and reduced EMI. Its quasi-complementary IGBT technology enables the FGH60N60SMD to be used in a variety of applications including motor control, inverters and high-frequency switching.
The specific data is subject to PDF, and the above content is for reference
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