Series:	--
Part Status:	Active
Lead Free Status:	Lead free
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	120A
Current - Collector Pulsed (Icm):	240A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 60A
Power - Max:	333W
Switching Energy:	227µJ (on), 100µJ (off)
Input Type:	Standard
Gate Charge:	79nC
Td (on/off) @ 25°C:	20.8ns/102ns
Test Condition:	400V, 15A, 4.7 Ohm, 15V
Reverse Recovery Time (trr):	34.6ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3

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Introduction

The FGH60T65SQD-F155 is a high-voltage high-speed IGBT (Insulated Gate Bipolar Transistor) designed for a wide range of applications. It has a temperature range of -55°C to 175°C, a maximum drain-source voltage of 600V, and a maximum 65A the continuous and 74A peak collector-emitter current. The FGH60T65SQD-F155 is an IGBT that belongs to the Single category.

Application Field and Working Principle

The FGH60T65SQD-F155 is primarily used for high power switching applications, such as motor drives, solar inverters, and motor controls. The FGH60T65SQD-F155 is suitable for use in switching applications that draw high currents, due to its low on-resistance and low gate charge characteristics. It is also suitable for use in high-voltage applications, such as power converters and resonant converter applications, due to its high-voltage resistant characteristics.The FGH60T65SQD-F155 is an IGBT, which means that it is both an N-channel insulated gate field-effect transistor and an NPN bipolar junction transistor. It is also a single type IGBT, which means it only has one N-channel and one P-channel instead of two N-channel devices and one P-channel device. The FGH60T65SQD-F155 operates by using built-in current flow control technology. This technology consists of a metal-oxide semiconductor field-effect transistor (MOSFET) and an NPN bipolar junction transistor (BJT) to control both current flow and voltage. The MOSFET is controlled by a low-voltage drive signal, while the BJT is controlled by a higher-voltage drive signal. When the MOSFET is turned on, current flows through the device, allowing an electric current to flow. The BJT is then turned on, allowing current to flow to the gate terminal and forming a channel of electrons between the source and the drain terminals. This channel of electrons is then modulated by the voltage applied to the gate terminal in order to control the current flow.

Conclusion

The FGH60T65SQD-F155 is a high-voltage and high-current IGBT ideal for high power switching applications. It has two distinct operating methods, a MOSFET and a bipolar junction transistor, and is able to control current flow with its built-in current flow control technology. It is part of the Single IGBT category, as it only has one N-channel and one P-channel. With its temperature range of -55°C to 175°C and maximum drain-source voltage of 600V, the FGH60T65SQD-F155 is ideal for a wide range of applications.

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