FJD5304DTF Allicdata Electronics

FJD5304DTF Discrete Semiconductor Products

Allicdata Part #:

FJD5304DTFTR-ND

Manufacturer Part#:

FJD5304DTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 4A DPAK
More Detail: Bipolar (BJT) Transistor NPN 400V 4A 30W Surface ...
DataSheet: FJD5304DTF datasheetFJD5304DTF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 30W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Base Part Number: FJD5304
Description

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The FJD5304DTF is a type of bipolar junction transistor (BJT). Typically, the FJD5304DTF is used in audio and low-frequency signal applications.

Bipolar junction transistors are made up of three layers of semiconductor material that are combined together to form two p-n junctions. Generally, the FJD5304DTF falls into the single- BJT category and is designed for operation in a variety of different environments.

The FJD5304DTF is designed for audio and low-frequency signal applications. It is able to provide clean and accurate signal amplification, due to its high output current drive capability and low input current requirements. The FJD5304DTF is commonly used for the production of low-noise signal amplification and signal processing.

In regards to the transistor’s working principle, bipolar junction transistors are based on the fact that current flows through a semiconductor material when a voltage is applied across it. The base-emitter junction forms the foundation of this principle; when a forward bias is applied, the majority of the current is conducted by holes and electrons. This enables the base emitter junction to act as a current amplifier, which is useful in audio and low-frequency signal amplifications.

In terms of power dissipation, the FJD5304DTF is designed to run at a very low power supply current as a result of its optimized drive voltage/current. This enables the FJD5304DTF to provide low-power efficiencies, as well as improve upon the signal-to-noise ratio.

Finally, the FJD5304DTF is designed for ease of use, which allows the user to employ the FJD5304DTF in a variety of different applications quickly and easily. The FJD5304DTF uses a pre-disposed light-sensitive lens that reduces the need for additional optics and enables instant activation of the transistor.

In conclusion, the FJD5304DTF is a type of bipolar junction transistor that is designed for audio and low-frequency signal applications. It is built to provide high output current drive capability and low input current requirements. It is also designed to be able to operate at a low power supply current, resulting in lower power dissipation and noise. Finally, the FJD5304DTF uses a pre-disposed lens, which reduces the need for additional optics and simplifies the entire setup.

The specific data is subject to PDF, and the above content is for reference

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