FJD5553TM Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 1A
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 400mA, 3V
Power - Max:	1.25W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Base Part Number:	FJD5553

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FJD5553TM Application Field and Working Principle

Introduction

The FJD5553TM is a high-performance, low-cost bipolar junction transistor (BJT). This type of transistor is a three terminal device made up of three layers of semiconductor materials, each layer having a different type of dopant, also known as a PN junction. Each of the three terminals serves a different purpose. The emitter terminal is connected to the N-type material, the base terminal is connected to the P-type material, and the collector terminal is connected to the N-type material.The FJD5553TM is an NPN transistor, meaning it has an N-type material for the emitter and base, and a P-type material for the collector. It has a wide variety of application fields, including high-power switching, linear amplification, and circuit protection. However, its most commonly used application field is for low-voltage, low-power switching applications.

FJD5553TM Basic Characteristics

The basic characteristics of the FJD5553TM include:•Maximum Collector-Emitter Voltage (VCE) of 75V •Maximum Collector-Base Voltage (VCB) of 75V •Maximum Collector Current (IC) of 4A •Maximum Power Dissipation (PD) of 150W•Package Type = TO-220ABThese characteristics make the FJD5553TM an ideal choice for a wide range of applications, allowing for high currents and high switching frequencies.

FJD5553TM Typical Applications

Some of the most common uses of transistors such as the FJD5553TM are:•High-speed switching •High-frequency amplification •DC-DC converters •Timing and control circuitry •Switching power supplies •Solid-state relays •Motor control •Analog signal processing •Current sources and sinks •Power transistor banksThese applications make the FJD5553TM a versatile and reliable transistor for a wide variety of applications.

FJD5553TM Working Principle

The FJD5553TM’s working principle is relatively straightforward. When a voltage is applied to the base terminal, this creates an electrical field between the base and the emitter. This field causes electrons to be drawn from the emitter to the base and allows for the current to flow from the collector to the emitter. In other words, the base current controls the collector current. The FJD5553TM is a BiPolar Junction Transistor (BJT). As such, it has an active mode, a saturation mode, and a cut-off mode. In the active mode, the collector current is controlled by the base current and the VCE voltage is relatively low. In the saturation mode, the collector current is at its maximum and the VCE voltage is at its minimum. Finally, in the cut-off mode, the collector current is zero, and the VCE voltage is at its maximum.

Conclusion

The FJD5553TM is an excellent choice for a wide range of applications, due to its easy to understand working principle and its wide variety of application fields. Its excellent characteristics also make it an ideal choice for low-voltage, low-power switching applications.

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