FJD5555TM Allicdata Electronics

FJD5555TM Discrete Semiconductor Products

Allicdata Part #:

FJD5555TMTR-ND

Manufacturer Part#:

FJD5555TM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 5A DPAK
More Detail: Bipolar (BJT) Transistor NPN 400V 5A 1.34W Surfac...
DataSheet: FJD5555TM datasheetFJD5555TM Datasheet/PDF
Quantity: 5000
Stock 5000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 800mA, 3V
Power - Max: 1.34W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Base Part Number: FJD5555
Description

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Transistors - Bipolar (BJT) - Single

The FJD5555TM is a type of single bipolar junction transistor (BJT) that is commonly used in a wide range of applications. It is widely used because it is an efficient and reliable device that can be used in a variety of ways. The FJD5555TM is a silicon-based transistor that is available in two different configurations, NPN and PNP. It is a low-power device with a rated collector-emitter voltage of 12V and a collector-base voltage of 20V.

Application Field

The FJD5555TM can be used in many situations for various purposes. It is often used in various consumer electronics such as audio amplifiers, radio and television receivers, and telephones. It is also utilized in many industrial applications such as motor control, temperature control, and switches and relays. It can also be used to form parts of more complex circuits. This versatility makes it an ideal choice for a wide range of applications.

Working Principle

The FJD5555TM operates on the principle of a bipolar junction transistor, which is also referred to as a BJT. A BJT is a semiconductor device in which current flows between two terminals that are separated by a narrow gap. The gap is filled with semiconductor material, usually silicon, in order for the electrical current to flow. The current is controlled by applying a voltage to the external terminal, which alters the amount of current that flows between the terminals.

In order for the FJD5555TM to operate correctly, it must have its base-emitter junction forward biased and its collector-base junction reversed biased. When the FJD5555TM is forward biased, current will flow between the base and emitter, while the current between the collector and base is blocked. This allows current to flow between the emitter and collector more easily, which is the purpose of the FJD5555TM.

The FJD5555TM is used in many different types of applications and can be used in many different configurations. It can be used in circuits ranging from simple amplifiers to complex logic circuits. The FJD5555TM is a reliable device that is easy to use and readily available for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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