Allicdata Part #: | FJN5471PWD-ND |
Manufacturer Part#: |
FJN5471PWD |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 20V 5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 5A 150MHz 750mW T... |
DataSheet: | FJN5471PWD Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 700 @ 500mA, 2V |
Power - Max: | 750mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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Transistors are electronic semiconductor devices which control electric signals and transfers current among two or more terminals. They can generally be divided into two categories: Bipolar junction transistors (BJT) and field effect transistors (FET). Bipolar junction transistors are divided into various types, such as single transistor, dual transistors, and complimentary transistors. Among these types, the single transistor is the most basic and commonly used one. The FJN5471PWD is a kind of single bipolar junction transistor, designed for industrial and automotive applications.
The purpose of the FJN5471PWD is to amplify currents, and it is mostly used in applications where there is low-noise and high-frequency special performance needs. For example, it can be used in power amplifiers and oscillators, displacing two transistors, reducing space, and simplifying the circuit design. It can also be used in ANT (Automatic Number Identification) phones, as well as automotive moving detectors, control circuits, and signal processing circuitry.
The FJN5471PWD works with a typical DC current gain, which is between 50 and 80 for low-frequency applications and between 70 and 140 for mid-frequency applications, depending on the bias base current. It features a collector current of up to 5A, saturation voltage, reverse leakage current and power dissipation. It is also designed to withstand extreme temperature, vibration, and shock conditions.
The FJN5471PWD’s working principle is relatively simple. It is a three-terminal device, and the flow of current from one terminal to the other is determined by the base current. A base current flow controls the base-emitter junction, which in turn controls the collector-emitter current through a fixed proportion, forming an amplification function. The higher the base current, the higher the output current and the greater the amplification effect. In summary, the FJN5471PWD is a high-performance single bipolar junction transistor, suitable for industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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