FJN5471TA

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 3A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	700 @ 500mA, 2V
Power - Max:	750mW
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3

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Introduction

The FJN5471TA is a 500 mA, 45 V NPNgeneral purpose BJT that can be found in small signal, audio, and power control applications. It is designed for low voltage, high current amplification and switching applications, including in audio system applications such as amplifier and speaker circuits, as well as in automotive, telecommunications, computer, and home audio systems. It has a low collector-emitter saturation voltage, making it suitable for applications requiring lower operating voltages. This article will provide an overview of the FJN5471TA’s application field and working principle.

Applications

The FJN5471TA is widely used in a variety of applications, including in audio systems such as amplifiers, speakers, and receivers. It is also used in power management applications such as DC-DC converters, in-car audio systems, and telecommunications systems. This NPN BJT also finds use in computer power supplies, TV power supplies, and other consumer electronic products.In audio applications, the FJN5471TA can be used as an amplifier output transistor, providing an effective power boost to drive speaker systems. It can also be used in circuits as an emitter-follower transistor, where it can provide an efficient voltage gain stage. Furthermore, in power control applications, the BJT can be used for fast switching in DC-DC converters and similar circuits.

Working Principle

The FJN5471TA is an NPN BJT, which is a three-layer semiconductor device consisting of an n-type semiconductor layer, a p-type semiconductor layer, and an intervening (adjacent) layer of n or p-type material. The terminal connections of this device, from left-to-right, are the base (B), collector (C) and emitter (E). When a voltage is applied to the base-collector junction, current can flow from the collector to the emitter. This is known as forward-bias voltage, and it will increase the current flow between the collector and emitter. This action acts to amplify the voltage of the input signal and results in an amplified output signal.The FJN5471TA is designed with a low total capacitance, allowing it to work at high frequencies. It also has a low saturation voltage (V_ce) of approximately 0.9 V, which allows the transistor to operate at low operating voltages.

Conclusion

The FJN5471TA is a versatile NPN BJT that is suitable for use in a range of applications, including in audio systems, power management circuits, and consumer electronics products. It has a low saturation voltage, making it suitable for low voltage, high current amplification and switching applications. Its efficient working principle allows for the amplification of input signals, resulting in an amplified output signal.

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