FJP3305H1

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	1V @ 1A, 4A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	19 @ 1A, 5V
Power - Max:	75W
Frequency - Transition:	4MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Base Part Number:	FJP3305

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Introduction

FJP3305H1 is a single bipolar junction transistor (BJT) that is commonly used in digital, analog and mixed signal integrated circuit (IC) applications. This type of transistor utilizes both n-type and p-type semiconductor materials in order to function as a switch or amplifier. It is formed when two layers of semiconductor material are joined together with a base in between. This transistor can be used in many different applications depending on its specifications.

Applications

One of the primary applications of the FJP3305H1 is in the field of analog amplifier design, as it is capable of handling high frequency and high power signals. It is also used for amplifier circuits where it amplifies low level input signals and can provide high gain with low distortion levels. In addition, it is used in digital circuits such as logic gates, flip-flops, and multiplexers. It is also used in many applications including protection circuits, audio amplification, low-voltage power supplies and signal processing.

Features

The FJP3305H1 transistor offers many advantages such as low leakage current, low collector-base capacitance and high gain-bandwidth products. It is also designed to handle high frequencies and power levels, making it perfect for high-frequency signal applications. Furthermore, this transistor can be used in either an npn or pnp configuration depending on the circuit design requirements. It is also RoHS-compliant and UL-approved, making it suitable for use in many applications.

Working Principle

The working principle of the FJP3305H1 is based on the movement of electrons through the semiconductor layers. When an electric current passes through the base of the transistor, it will cause electrons to move from the base to the emitter, creating a gain. When the electrons leave the emitter, they will be attracted to the collector, forming a gain between the emitter and collector. This increase in the current between the emitter and collector will cause the transistor to switch on and conduct current.

Conclusion

The FJP3305H1 is a single bipolar junction transistor (BJT) that is commonly used in many digital, analog and mixed signal integrated circuit (IC) applications such as audio amplification, logic gates and protection circuits. It is capable of handling high frequency and high power signals and is RoHS-compliant and UL-approved. The FJP3305H1 works by allowing electrons to move from the base to the emitter, creating a gain, with the electrons then being attracted to the collector, further increasing the current level which switches the transistor on.

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