Allicdata Part #: | FJP3307DTU-ND |
Manufacturer Part#: |
FJP3307DTU |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 8A TO220 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 8A 80W Through ... |
DataSheet: | FJP3307DTU Datasheet/PDF |
Quantity: | 1836 |
1 +: | $ 0.57960 |
10 +: | $ 0.51723 |
100 +: | $ 0.40333 |
500 +: | $ 0.33319 |
1000 +: | $ 0.26304 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 2A, 8A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 5 @ 5A, 5V |
Power - Max: | 80W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
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Bipolar Junction Transistor or BJT is a key semiconductor device that has a wide range of applications from amplifying signals and switching to voltage regulation and current limiting. The FJP3307DTU is one such example of a bipolar junction transistor in single package form. It is a three port device with two bipolar NPN transistors in a single package.
The FJP3307DTU is a very important type of BJT device as it can be used for many applications such as amplifying signals and regulating power supply. The FJP3307DTU device is capable of operating at very high voltages and temperatures and provides a great deal of flexibility in the power range it can handle. It is widely used in many applications such as power supplies, switching and amplifying circuits, and even in power conditioning circuits.
The FJP3307DTU is composed of two individual NPN (Negative Positive Negative) transistors that are connected together in a single package. The two transistors are usually joined together at their base and collector terminals while the emitter is connected externally. The two transistors are then connected in either a common collector configuration or a common emitter configuration.
The FJP3307DTU works on the principle of two active regions, namely the cut-in current gain and the saturation current gain. When sufficient current is applied to the base of the transistor, the two active regions of the device start to become active. The cut-in current gain is the small gain that occurs in the transistor before the saturation current gains. Cut-in current gains are controlled by the base-emitter and base-collector junction voltages, whereas the saturation current gains are controlled mostly by the collector-emitter voltage. As more current is applied to the base of the transistor, the two active regions of the transistor start to merge into one, indicating the point when the transistor is said to be “saturated”.
The FJP3307DTU is a very important BJT device due to its versatility and reliability. It is very popular in many applications such as amplifying and switching circuits, voltage regulation and power conditioning circuits. Its wide voltage range also allows it to be used in many different applications. The device also provides a great deal of flexibility in the power range it can handle as well as excellent temperature characteristics, making it an ideal device for many applications.
In conclusion, the FJP3307DTU is a very important and versatile type of BJT device. It provides excellent temperature stability and excellent voltage characteristics, making it an ideal choice for many power applications. Its wide voltage range and high switching speed also make it an ideal choice for many other applications such as amplifying and switching circuits. This article has provided an overview of the FJP3307DTU device and its applications and working principle, and should help readers understand the importance and versatility of such a device.
The specific data is subject to PDF, and the above content is for reference
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