Allicdata Part #: | FJP3305H2-ND |
Manufacturer Part#: |
FJP3305H2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 4A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 4A 4MHz 75W Thro... |
DataSheet: | FJP3305H2 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 1A, 4A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 26 @ 1A, 5V |
Power - Max: | 75W |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | FJP3305 |
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The FJP3305H2 is a device that belongs to a class of transistors known as Bipolar Junction Transistors (BJT) Single. BJTs are a type of solid-state electronic device commonly used in a variety of electronic amplifying, switching, and other input/output applications.
BJTs consist of three semiconductor layers or regions, and their primary function is to control the flow of current. A BJT is similar to a standard transistor except for its three connectivity and the number of layers it has. The three layers are an emitter, a collector, and a base. Each layer is responsible for a different part of the BJT’s voltage/current control.
The FJP3305H2 is designed for high frequency operations and is ideal for applications such as switching, amplifying, and other input/output applications. In terms of amplification, the FJP3305H2 makes it possible to increase the power of an electrical signal while maintaining excellent signal integrity.
The FJP3305H2 exhibits excellent collector efficiency and collector-base junction-vice characteristics. It is also highly resistant to environmental changes and is able to operate over extreme temperature ranges. It is highly reliable and requires minimal current input to activate its junction. Additionally, the FJP3305H2 is known for its low collector-emitter capacitance, which makes it ideal for use in high-speed applications.
The FJP3305H2 works by controlling the flow of current between its collector and its emitter junctions. When a small current is applied to the base, the base-emitter diode junction is activated and the current will flow between the collector and the emitter. This current flow can be controlled by varying the voltage applied to the base.
The FJP3305H2 is an ideal choice for applications requiring high frequency operations, low power dissipation, and excellent signal integrity. Additionally, the FJP3305H2 exhibits excellent collector efficiency and low collector-emitter capacitance, making it an excellent choice for use in applications that require fast switching speeds.
The specific data is subject to PDF, and the above content is for reference
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