Allicdata Part #: | FJX3001RTF-ND |
Manufacturer Part#: |
FJX3001RTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | FJX3001RTF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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The FJX3001RTF is a pre-biased, single bipolar junction transistor (BJT). It is a low-power, low-noise device that offers high-gain performance. It is well-suited for a wide range of general-purpose, low-power, RF, and audio applications.
The FJX3001RTF is a PNP transistor, meaning it has two n-type layers between the emitter and base and a p-type layer between the collector and base. It is a three-layer device, meaning it is capable of both NPN and PNP operation. The base is pre-biased to ensure a low-distortion, linear transfer characteristic.
The FJX3001RTF provides high-gain performance and low-noise operation in a wide range of general-purpose, RF, and audio applications. It is particularly suited for low-power applications such as small-signal amplifiers, audio and RF amplifiers, instrumentation amplifiers, power supply regulation, pulse-width modulation circuits, and motor speed controls. It can also be used for switching applications such as motor control and small-signal switching.
The working principle of the FJX3001RTF is based on the bipolar junction transistor (BJT). When current flows through the emitter-base junction of a BJT, it creates a potential difference which causes a voltage gradient across the emitter and collector electrodes. This voltage gradient allows current to flow through the transistor, producing a gain effect. Since the current through the emitter is directly proportional to the base current, the FJX3001RTF can be used to control the amount of current flowing through a circuit, or to amplify a signal.
The FJX3001RTF is a fast, low noise device that offers excellent gain-bandwidth product and low supply current. With its low-power consumption, it is well-suited for battery-powered applications. Its high-gain performance makes it ideal for audio and RF applications. It can also be used for power supply regulation, pulse-width modulation circuits, and motor speed controls.
In conclusion, the FJX3001RTF is a pre-biased, single bipolar junction transistor (BJT) designed for low-power, low-noise applications. It is suitable for a variety of general-purpose, audio, RF, and power applications. It has a high gain-bandwidth product and low supply current, making it ideal for battery-powered applications. Its high-gain performance makes it an excellent choice for audio and RF applications.
The specific data is subject to PDF, and the above content is for reference
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