FJX3001RTF Allicdata Electronics
Allicdata Part #:

FJX3001RTF-ND

Manufacturer Part#:

FJX3001RTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: FJX3001RTF datasheetFJX3001RTF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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The FJX3001RTF is a pre-biased, single bipolar junction transistor (BJT). It is a low-power, low-noise device that offers high-gain performance. It is well-suited for a wide range of general-purpose, low-power, RF, and audio applications.

The FJX3001RTF is a PNP transistor, meaning it has two n-type layers between the emitter and base and a p-type layer between the collector and base. It is a three-layer device, meaning it is capable of both NPN and PNP operation. The base is pre-biased to ensure a low-distortion, linear transfer characteristic.

The FJX3001RTF provides high-gain performance and low-noise operation in a wide range of general-purpose, RF, and audio applications. It is particularly suited for low-power applications such as small-signal amplifiers, audio and RF amplifiers, instrumentation amplifiers, power supply regulation, pulse-width modulation circuits, and motor speed controls. It can also be used for switching applications such as motor control and small-signal switching.

The working principle of the FJX3001RTF is based on the bipolar junction transistor (BJT). When current flows through the emitter-base junction of a BJT, it creates a potential difference which causes a voltage gradient across the emitter and collector electrodes. This voltage gradient allows current to flow through the transistor, producing a gain effect. Since the current through the emitter is directly proportional to the base current, the FJX3001RTF can be used to control the amount of current flowing through a circuit, or to amplify a signal.

The FJX3001RTF is a fast, low noise device that offers excellent gain-bandwidth product and low supply current. With its low-power consumption, it is well-suited for battery-powered applications. Its high-gain performance makes it ideal for audio and RF applications. It can also be used for power supply regulation, pulse-width modulation circuits, and motor speed controls.

In conclusion, the FJX3001RTF is a pre-biased, single bipolar junction transistor (BJT) designed for low-power, low-noise applications. It is suitable for a variety of general-purpose, audio, RF, and power applications. It has a high gain-bandwidth product and low supply current, making it ideal for battery-powered applications. Its high-gain performance makes it an excellent choice for audio and RF applications.

The specific data is subject to PDF, and the above content is for reference

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