FJX3014RTF

The FJX3014RTF is a type of single, pre-biased bipolar junction transistor (BJT). This device is a three-terminal, NPN-type transistor that is commonly used in applications where high-voltage and high-current capability are needed. This device has a relatively low-voltage and high-current gain, making it a popular choice for applications in the industrial, automotive, medical, and avionics industries. In this article, we will discuss the FJX3014RTF’s application field and working principle.

The FJX3014RTF has a low saturation voltage, a high breakdown voltage, and a temperature range of -55°C to 175°C, making it suitable for a variety of high-voltage, high-current applications. The device is used in a number of power amplification, voltage regulation, and switching applications and is often used in audio amplifier circuits, in high-voltage supplies, in DC-DC converters, and in automotive electronic systems. Additionally, the device can be used in medical and avionic applications, such as controlling the fuel pump in a medical device or the engine RPM in an aircraft.

The FJX3014RTF has a number of features that make it well suited for its various applications. Firstly, the device has a relatively high current gain at a low voltage. This feature makes it suitable for a number of application requirements, such as driving motors, providing power amplification, and controlling other high-voltage, high-current devices. Additionally, the device has a relatively low saturation voltage and a high breakdown voltage, meaning it can handle higher voltages without damaging the device.

The FJX3014RTF also features a low input impedance, making it well suited for use in situations where high precision and fast responses are desired. Furthermore, the device also has a relatively low output impedance, meaning it can drive heavy loads without significant losses in its performance. Finally, the device has a temperature range of -55°C to 175°C, meaning it can be used in a variety of high-temperature applications.

The FJX3014RTF’s working principle is based on the bipolar transistor effect. In a single, pre-biased BJT device, current flows between the emitter and collector when the base of the transistor is forward biased. This causes the current flowing between the emitter and collector to increase as the base voltage increases. This increase in current is proportional to the base voltage, up to a point called the “saturation region”, where the current begins to decrease with increasing base voltage.

The FJX3014RTF’s high-gain, low-voltage performance makes it ideal for a number of applications, such as power amplification, voltage regulation, and switching. The device is also well suited for use in high-current applications, such as driving motors, controlling other high-voltage, high-current devices, and providing power amplification. Finally, the device’s temperature range of -55°C to 175°C makes it suitable for a wide range of high-temperature applications.

FJX3007RTF	ON Semicondu...	0.04 $	1000	TRANS PREBIAS NPN 200MW S...
FJX3008RTF	ON Semicondu...	--	1000	TRANS PREBIAS NPN 200MW S...
FJX3014RTF	ON Semicondu...	--	1000	TRANS PREBIAS NPN 200MW S...
FJX3904TF	ON Semicondu...	--	1000	TRANS NPN 40V 0.2A SOT323...
FJX3015RTF	ON Semicondu...	0.0 $	1000	TRANS PREBIAS NPN 200MW S...
FJX3005RTF	ON Semicondu...	0.0 $	1000	TRANS PREBIAS NPN 200MW S...
FJX3012RTF	ON Semicondu...	0.0 $	1000	TRANS PREBIAS NPN 200MW S...
FJX3013RTF	ON Semicondu...	0.0 $	1000	TRANS PREBIAS NPN 200MW S...
FJX3010RTF	ON Semicondu...	0.0 $	1000	TRANS PREBIAS NPN 200MW S...
FJX3003RTF	ON Semicondu...	--	1000	TRANS PREBIAS NPN 200MW S...
FJX3009RTF	ON Semicondu...	0.0 $	1000	TRANS PREBIAS NPN 200MW S...
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FJX3004RTF	ON Semicondu...	--	1000	TRANS PREBIAS NPN 200MW S...
FJX3001RTF	ON Semicondu...	--	1000	TRANS PREBIAS NPN 200MW S...
FJX3002RTF	ON Semicondu...	--	1000	TRANS PREBIAS NPN 200MW S...
FJX3011RTF	ON Semicondu...	0.0 $	1000	TRANS PREBIAS NPN 200MW S...
FJX3906TF	ON Semicondu...	--	9000	TRANS PNP 40V 0.2A SOT-32...