FJX3012RTF Allicdata Electronics
Allicdata Part #:

FJX3012RTF-ND

Manufacturer Part#:

FJX3012RTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: FJX3012RTF datasheetFJX3012RTF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Resistor - Base (R1): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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The FJX3012RTF is a single, pre-biased, bipolar junction transistor (BJT) that can be used in a variety of applications. This device is a type of BJT, which means it has three electrodes: a base, a collector, and an emitter. The FJX3012RTF is a NPN type transistor, meaning it has an extra layer in its base region that allows current to flow between the base and collector on little energy input while still being able to handle a relatively large current load. This makes it ideal for use in a variety of circuits, including amplifiers and switches.

The FJX3012RTF is designed for use in pre-biased circuits, meaning it is designed to work with a voltage bias present at the base. This allows the collector-emitter voltage to be decreased from its normal operating voltage, meaning less energy is consumed by the device and that the current gain is increased. This is useful for circuits that need to operate at lower voltages, or for circuits that require higher precision current control.

The FJX3012RTF has an exceptionally wide range of operating voltages, with a breakdown voltage of 72V and an operating voltage range of -10V to +70V. This makes the device perfect for use in a variety of environments, including automotive and industrial applications. The device also features a high switching frequency and a low power dissipation, making it perfect for use in applications that require fast response times and low power consumption.

When it comes to the working principle, the FJX3012RTF operates on the principle of current gain. As is common in transistors, the current gain is a ratio of the collector-emitter current to the base-emitter current. This ratio is determined by the collector-emitter voltage and the base-emitter voltage. The FJX3012RTF is designed to operate with a stable, predictable current gain over its operating voltage range. This, coupled with its high breakdown voltage and low operating voltage, make it perfect for use in a variety of applications.

The FJX3012RTF is an ideal device for use in applications that require stable current gain, such as amplifiers and switches. Its wide operating voltage range, low power dissipation, and high switching frequency make it perfect for use in a variety of applications, including automotive and industrial applications. Overall, the FJX3012RTF provides excellent precision control and stability, making it perfect for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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