FJX3004RTF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323

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The FJX3004RTF is a high-performance Bi-directional NPN silcon transistor packaged in the industry-standard TO-93-L package. This hardened, first-class device is part of a single, pre-biased family of transistors. Unlike conventional prebiased transistors, the FJX3004RTF is designed to perform well in high temperature environments, making it suitable for use in extreme applications. When operated at its maximum junction temperature, the device can withstand an impressive +255°C junction temperature.The FJX3004RTF utilizes a pre-biased collector-emitter resistor, allowing for greater frequencies and higher power dissipation. The device also features a pungent built-in emitter-follower circuit that allows for superior analog performance. Additionally, its reverse diode conduction design helps to improve the device’s reverse-conduction capabilities, while its high standoff-ratio collector-emitter impedance allows for superior motor drive and saturate conduction, even at extreme temperatures.The device has a wide range of applications due to its impressive performance characteristics. It is suitable for power supplies and motor drives, as well as for logic level converters and logic drivers. The usage of advanced parallel-npn- transistor technology also makes it well-suited for low-frequency switching applications.When shunt-mode paralleling of transistors is used, the FJX3004RTF provides superior performance in power applications. Its ability to accommodate large parallel-transistor layouts and its robust reliable structure makes it a great choice for the power-supply market. Its superior power-dissipation and unique voltage characteristics also make it ideal for very high frequency and high-speed applications.The FJX3004RTF also makes a good choice for signal-regeneration, signal-conditioning, and noise-suppression applications due to its high-input-impedance and low-input-capacitance characteristics. Its high-output-impedance and low-output-capacitance also makes it suitable for analog and digital applications alike. In terms of its working principle, the FJX3004RTF employs the commonly applied 4-lead NPN (bipolar) transistor topology. It has a bi-layer base construction and is designed for use in low-voltage current-driven applications. Its inner NPN transistor is configured as an emitter-follower circuit and is driven by an external power source which is connected to the base via the collector-emitter terminal. This provides the device with greater control over current-flow and prevents its inner bipolar transistor from saturating.Furthermore, its high-gain reverse diode conduction design helps to make the FJX3004RTF highly-efficient in its operation. It is also thermally self-protected to prevent overloaded output current, resulting in more reliable and robust operation.In conclusion, the FJX3004RTF single, pre-biased transistor is a great choice for low-voltage current-driven applications, such as power supplies, motor drives, logic level converters, logic drivers and signal-regeneration and noise-suppression applications. Its unique design allows for superior performance in extreme temperature environments and its reverse-conduction capabilities make it ideal for very high frequency and high-speed applications. Its superior power-dissipation and voltage characteristics make it suitable for a wide range of applications.

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