FJX4004RTF Discrete Semiconductor Products |
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Allicdata Part #: | FJX4004RTFTR-ND |
Manufacturer Part#: |
FJX4004RTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJX4004RTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Base Part Number: | FJX4004 |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FJX4004RTF is a single, pre-biased, bipolar junction transistor (BJT). It is a three-terminal device that is commonly used in amplifying or switching applications. It is designed to perform in high-speed, high-frequency circuits with a large current capability and low switching losses.
The FJX4004RTF has a variety of uses ranging from small-signal switching, to current amplification, to high-voltage switching and protection. The high-current capability of the FJX4004RTF allows it to be used in circuits that require fast, reliable switching. It is also well suited for use in switching applications in radio frequency (RF) circuits.
The FJX4004RTF has a number of features that make it ideal for a variety of applications. It is capable of operating at high frequencies, has high breakdown voltage, and can handle high current levels. Additionally, the FJX4004RTF has low on-state voltage drop and low on-state power dissipation. It also offers fast switching times and has a high collector-to-emitter maximum voltage.
The underlying operating principle of the FJX4004RTF is based on the bipolar junction transistor. A BJT is a type of transistor which has three terminals. The base terminal is used to control the current which flows from the collector to the emitter. When a small current is applied to the base terminal, the current gain of the device increases and the current through the collector and emitter terminals increases as well. By varying the current applied to the base terminal, the current through the collector and emitter can also be varied.
The FJX4004RTF has a pre-biased structure which means that the collector and base terminals are connected together internally. This type of pre-bias enables the use of the FJX4004RTF in switching applications. When the device is triggered with a low current at its base terminal, it can switch quickly and reliably with low power consumption. This makes the FJX4004RTF a good choice for many types of high-speed, high-frequency switching applications. Additionally, the pre-biased structure of the device also helps to reduce current losses in the device when it is in use, providing improved efficiency and reliability.
The FJX4004RTF is a versatile device with a variety of applications in high-speed switching and high-frequency circuits. It has a pre-biased structure which helps to reduce power consumption and maximize reliability. Additionally, it has a high breakdown voltage, high collector-emitter maximum voltage and fast switching times. Therefore, the FJX4004RTF is an excellent choice for a variety of applications including current amplification, switching and protection, and radio frequency (RF) circuits.
The specific data is subject to PDF, and the above content is for reference
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