Allicdata Part #: | FJX4012RTF-ND |
Manufacturer Part#: |
FJX4012RTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | FJX4012RTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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Transistors are versatile electrical components that are commonly used in today’s modern electronics industry. Specifically, bipolar junction transistors (BJT) are the most commonly used form for amplifying and switching analog or digital signals, and have a wide range of applications. The FJX4012RTF Transistor is a pre-biased BJT, which is specifically designed with enhanced performance and low noise generation, making it ideal for digital signal processing (DSP) applications.
Pre-biased transistors are an ideal choice for devices such as mixed signal controllers and digital signal processors, as they can be used in applications that require wide frequency response, higher speed and low power consumption. When the device is used in pre-biased fashion, the circuit operates in a condition where the amplification is higher and the signal-to-noise ratio is superior.
The FJX4012RTF transistor is a single-cell breakout transistor capable of moving direct current (DC) signals from one point to another. It has a low input capacitance of 5 picofarads (pF), which allows for faster switching speeds and less noise generation. The maximum operating temperature is rated at 155°C, making the device suitable for a broad range of temperature-critical applications. This means that the FJX4012RTF can be used in environments ranging from industrial to medical and military applications.
The unique silicon architecture of the FJX4012RTF also makes it a suitable solution for stable pre-biased operations. This means that the device can be used as a single-ended device with the addition of a complimentary transistor in the circuit. The intrinsic switching characteristics of the FJX4012RTF can be used to advantage in specific applications, providing improved signal conversion with increased performance and reliability.
The FJX4012RTF is designed to work with a collector-emitter voltage of 3 to 200 volts and collector-base voltage up to 250 volts, depending on the application requirements. The collector-emitter saturation voltage of the FJX4012RTF is typical of 0.5V, meaning that it is capable of delivering a very low voltage drop when dissipating power. As a result, the FJX4012RTF can be used for a range of power applications including on/off control, power line regulation, and other current or voltage regulation tasks.
In general, the FJX4012RTF provides excellent performance for a wide range of power and signal processing applications. By using this device in pre-biased applications, low noise generation and fast switching speeds can be achieved. This makes the FJX4012RTF an ideal choice for users who require robust performance and reliable operation in small size packages.
The specific data is subject to PDF, and the above content is for reference
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