FJX4006RTF Allicdata Electronics

FJX4006RTF Discrete Semiconductor Products

Allicdata Part #:

FJX4006RTFTR-ND

Manufacturer Part#:

FJX4006RTF

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS PNP 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: FJX4006RTF datasheetFJX4006RTF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.02998
6000 +: $ 0.02606
15000 +: $ 0.02215
30000 +: $ 0.02085
75000 +: $ 0.01955
150000 +: $ 0.01738
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: FJX4006
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Series: --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Transistors are one of the most important components in electrical engineering. Bipolar (BJT) transistors are especially useful when it comes to switching applications, such as amplifying AC or DC signals, controlling current/voltage, and switching in/out of a power supply. The FJX4006RTF is a special type of BJT transistor, which is pre-biased for improved stability and conformance with the selected application field.

The FJX4006RTF is designed to operate over a wide range of temperature from -55 to +125 °C and operate in a voltage range from 5V to 160V. It is a single, pre-biased type, featuring a power dissipation of 200mW with a maximum collector-base breakdown voltage of 160V. The collector-emitter breakdown voltage is at a significantly lower 60V. Due to its pre-biased design, this type of BJT transistor is especially well suited for applications in which space-constraints and/or design simplicity are of the utmost priority. Moreover, it has a low base-emitter turn-on voltage and fast switching time, making it suitable for high-frequency applications.

The FJX4006RTF operates on a principle known as the junction field-effect transistor (JFET) effect, which is based on the impedance characteristics of a semiconductor junction in which current can flow in only one direction. This property, combined with the transistor\'s pre-biased design, enables the device to not only reduce current leakage, but also provide superior temperature stability and power dissipation. Additionally, the FJX4006RTF also offers improved response time and signal integrity over that of conventional transistors, making it ideal for high-speed applications.

Given its pre-biased nature, the FJX4006RTF is particularly useful in applications in which a low base-emitter turn-on voltage and fast switching time are required. It is also highly suitable for high-frequency and high-pressure applications such as switch mode power supplies, and is often used in automotive systems and robotics. Further, it is suitable for applications subject to high temperature and vibration, as the pre-biased design provides additional robustness and reliability.

All-in-all, the FJX4006RTF is an excellent transistor for applications which require a high-performance, pre-biased BJT transistor. Its wide operating temperature and voltage range, combined with its impressive thermal and electrical properties, makes it well-suited for a variety of applications, from automotive, industrial and robotics to power-supply and communications systems.

The specific data is subject to PDF, and the above content is for reference

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