FM24CL64B-GA

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FM24CL64B-GA is an eight-pin serial EEPROM memory component designed and produced by the Faraday microelectronics company. Currently, it is widely used in a variety of fields.

Applications

It is suitable for applications with limited space, high endurance and low power consumption. It can be used as nonvolatile storage for small amounts of data such as timers, counters, configuration settings and parameters. It is widely used in applications such as industrial controllers, medical equipment, automotive electronics, telecommunications, consumer electronics and data acquisition systems.

Features

• Wide voltage range: 2.7V-5.5V
• Serial output in standard I²C format
• Low power consumption: maximum standby current of 4 μA
• Very low write current: 16 μA for each write cycle
• High endurance: minimum 100,000 write cycles
• Internal self-timed write cycle
• On-chip data protection scheme
• Write protect pin available
• High performance EEPROM memory: 64K bits of memory

Working Principle

Based on Serial Peripheral Interface (SPI) or Inter Integrated Circuit (I²C) interface, the device is composed of 64K bits of EEPROM on the same integrated circuit. Its random access capability allows reading, writing, erasing and programming data in the same order. Using SPI or I²C communication protocol, data can be divided into eight 8-bit data frames and sequential read and write operations can also be done. It also has an integrated interrupt pin which indicates when the read/write microcontroller is busy.

The data is stored in an array of memory cells, each of which consists of a control gate, a conductive tunneling layer, a floating gate and a drain. The control gate of each memory cell is connected to a word line, and the hole channel of each cell is connected to a bit line. Each write cycle, the bit line is charged with a certain level of voltage, and the control gate is connected to the voltage of the word line. When the tunneling layer is activated, the electric charge will move through the control gate and be stored in the floating gate. This is how a write operation is processed.

To read data, a voltage must be applied to the control gate, and the voltage of the bit line connected to the tested memory cell will change accordingly. This will suggest whether the memory cell has a charge or not, and thus the data can be retrieved. If a data erase operation is desired, the reverse procedure is done.

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