FM24V10-GTR Integrated Circuits (ICs)

Memory

FM24V10-GTR is an advanced memory component from Fujitsu, which can offer higher speed startup, faster read/write performance, and increased design flexibility for ASIC, FPGA and processor-based systems.

The FM24V10-GTR is a low-voltage CMOS serial SRAM device with a 128K bit density. It consists of multiplexed I/Os, a high speed serial accessing interface, and a write mode register. The FM24V10-GTR has advanced self-timed write capability and supports a single-pin 3.3V power supply and 0.18 μm CMOS technology.

The dual-mode write operation of the FM24V10-GTR enables two write algorithms: 1) setting the write mode register to synchronous write operation and 2) writing directly in page mode. The FM24V10-GTR also supports read/write burst operation for uploading and downloading data to or from an external device. Data transmission is performed at up to 200 Mbps, depending on the system design.

The FM24V10-GTR is suitable for a wide range of portable and low power applications such as communications systems, industrial automation, medical equipment and consumer electronics. It supports a wide operating temperature range of -40ºC to +85ºC, allowing it to be used in harsh environment. The FM24V10-GTR can help cut down development time and costs, enabling designers to easily and quickly incorporate reliable, high-quality memory into their designs.

Application fields

The FM24V10-GTR is mainly used for embedded memory applications in portable and low power systems requiring low operating voltages with minimal current consumption.

It is used in applications such as data logging and modular control systems, where memory and communications must operate under extreme temperature conditions. It is also suitable for radio frequency identification (RFID) tags requiring serial access in harsh environments.

Working Principle

The FM24V10-GTR operates in two modes - synchronous write mode and direct write mode. In synchronous write mode, the data is written byte-by-byte via a serial access interface. In direct write mode, the data is written in a page mode by writing directly to the memory address.

The FM24V10-GTR also supports a read/write burst mode, enabling data to be uploaded and downloaded to or from an external device at up to 200 Mbps. The data transmission speed can be increased or decreased depending on the system design.

The data stored in the memory can be accessed at random and the memory pages can be accessed in either a cyclic or random order. The FM24V10-GTR has an internal register which allows the user to define the size of the page to be accessed.