FM93C66LMT8

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The FM93C66LMT8 is a memory device sourced from Ramtron International Corporation. This device is a Nonvolatile Ferroelectric Random Access Memory (F-RAM) chip, specifically designed for applications requiring storage of non-volatile data. It is a low power memory device, with a maximum supply voltage of only 1.7V, making it ideal for low power embedded systems. The device has an 8-pin package, which makes it well suited for space-constrained embedded applications.

This memory device is ideal for applications that need to store large amounts of non-volatile data, such as in industrial automation, medical equipment, and other embedded systems. It has a wide temperature range of -40 to +85 celsius, which makes it suitable for use in extreme environment applications. The FM93C66LMT8 supports both asynchronous and synchronous modes, allowing for faster data transfer speeds compared to other F-RAM devices.

The FM93C66LMT8 utilizes Ferroelectric technology, which is an alternate form of nonvolatile memory, allowing high speed random access with no latency. It has a two-transistor setup, with a transistor to store each bit. The device is also non-volatile, meaning that the data stored will be retained even if the power is removed from the device. The FM93C66LMT8 is a write-protected memory device, eliminating the need for an external write-protect signal.

The working principle of the FM93C66LMT8 is essentially the same as other F-RAM devices. Data is stored as a charge in a ferroelectric material, and this charge remains even when power is removed from the device. When data is written to the memory, the material is re-polarized with an electric field, creating a new charge. This charge is retained until it is overwritten with a new value. For reads, the polarity of the charge is sensed and the appropriate value is output.

The FM93C66LMT8 is an ideal memory solution for non-volatile data storage applications, specifically those that require low power, reliability, and speed. It offers a wide temperature range, write-protection, and a package tailored for space-constrained applications. It combines the advantages of Ferroelectric technology with the reliability and economy of a standard memory chip, making it the perfect choice for many embedded systems.

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