FOD817B

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1. Description

The FOD817B consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4−pin dual in−line package.

2. Features

    1. AC Input Response (FOD814)

    2. Current Transfer Ratio in Selected Groups

        - FOD814: 20–300%

        - FOD814A: 50–150%

        - FOD817: 50–600%

        - FOD817A: 80–160%

        - FOD817B: 130–260%

        - FOD817C: 200–400%

        - FOD817D: 300–600%

    3. Minimum BVCEO of 70 V Guaranteed

    4. Safety and Regulatory Approvals

        - UL1577, 5,000 VACRMS for 1 Minute

        - DIN EN/IEC60747−5−5

    5. This Device is Pb−Free

3. Applications

    1. FOD817 Series

        - Power Supply Regulators

        - Digital Logic Inputs

        - Microprocessor Inputs

4. Pin configuration