Allicdata Part #: | FP150R12KT4B11BPSA1-ND |
Manufacturer Part#: |
FP150R12KT4B11BPSA1 |
Price: | $ 177.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 150A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP150R12KT4B11BPSA1 Datasheet/PDF |
Quantity: | 10 |
1 +: | $ 161.07800 |
Series: | EconoPIM™3 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 150A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 150A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 9.35nF @ 25V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The FP150R12KT4B11BPSA1 is a type of insulated-gate bipolar transistor (IGBT) module. It is mainly used as a DC-DC or AC-DC switching device in power electronic control applications. With a wide voltage range of 1200 V, it offers a high current rating up to 150 A, making it suitable for applications requiring power switching and low-level control. It is widely used in the aerospace industry, UPS systems, motor drives, solar inverters, and other electrical systems.
An IGBT module based on the FP150R12KT4B11BPSA1 is a type of power semiconductor device, which is similar to a metal-oxide-semiconductor field-effect transistor (MOSFET). It combines the features of a bipolar and insulated-gate transistor to provide the best of both technologies. Its main feature is that it can switch both unidirectional and bidirectional current, thus providing superior control and reliability. The IGBT is able to efficiently and economically switch AC to DC and vice versa.
The FP150R12KT4B11BPSA1 works on the principle of pulse-width modulation (PWM). PWM is a technique of controlling the output power of electronic devices by controlling the period and the length of the pulses. By varying the voltage or current during the pulse widths, the output power of the IGBT module can be regulated. The length of the pulse widths is set manually with the help of an appropriate controller.
For protective circuits in the IGBT module, a single diode is used in series with the collector and a zener diode is connected across the collector. This protection helps reduce the output voltage and current to levels that are no longer dangerous. This makes it safe to operate the IGBT module under high voltage and current conditions.
Apart from the applications mentioned earlier, the FP150R12KT4B11BPSA1 can be used in various other applications, including motor control and DC-DC converters. In motor control applications, the IGBT module can be used for controlling the speed, direction and torque of the motor. In DC-DC converters, the IGBT module can be used to step up or step down a voltage, depending on the needs of the system.
The FP150R12KT4B11BPSA1 is an excellent choice of IGBT module for switching power and low-level control. It is highly reliable and efficient and can be used in numerous applications due to its wide voltage range and high current rating. It works on the principle of PWM and is protected by various protective circuits, making it safe to use for a range of industrial and aerospace applications.
The specific data is subject to PDF, and the above content is for reference
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