FP15R12KE3GBOSA1

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	25A
Power - Max:	105W
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 15A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	1.1nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Introduction to FP15R12KE3GBOSA1

FP15R12KE3GBOSA1 is a module manufactured by Infineon Technologies which offers the unique combination of a high blocking voltage, low conduction losses, and small size. This module enables manufacturers to lessen the space consumption typically required for IGBT (Insulated Gate Bipolar Transistor) applications. The device is made up of three fairly independent parts, the control gate, collector and emitter, and has a wide range of applications.

Application Field of FP15R12KE3GBOSA1

The main applications of FP15R12KE3GBOSA1 are in the fields of Solar Inverters and EV Chargers. Solar Inverters, typically used in solar energy production, require devices with low conduction losses, and the high-quality performance of the module is of particular interest for this application. EV chargers, on the other hand, use high blocking voltage devices, and this module is perfectly suited for this type of application. The device also has utility in high-frequency switching applications. Its ability to control the switching of large currents means that the module can be used in high-frequency power circuitry and insulation structures, while its low conduction losses allow a higher switching frequency than standard modules. This makes it useful in a wide range of applications, such as renewable energy generation, medical equipment and distortion-free power circuits. In addition, FP15R12KE3GBOSA1 can be used for applications that require circuit protection and reversing current prevention, such as in UPS systems. This module can be used in machines that require high power components, like welding machines, induction heaters and press brakes. In industrial automation, the module can be used to control the speed of a motor.

Working Principle of FP15R12KE3GBOSA1

FP15R12KE3GBOSA1 works on a similar principle to other IGBT devices. It comprises a P-type and an N-type semiconductor connected by a common emitter layer. An insulated gate is placed on the junction between the P and N type. When the gate is activated, electrons are drawn in the P-type material and holes in the N-type material, leading to an increase in the current through the device. Furthermore, the gate can act as a voltage source, further increasing the current through the device. FP15R12KE3GBOSA1 is designed for applications requiring high blocking voltages and high temperature endurance. It is designed as a three phase module with one gate driver for each phase and has a blocking voltage rating of up to 1700V. The device has a minimum working temperature of -40 °C, which makes it suitable for cold climates. The module also has low conduction losses for increased energy efficiency, and high frequency switching capabilities for faster switching times.

Conclusion

The FP15R12KE3GBOSA1 module is an ideal device for a wide range of applications, as it has a high blocking voltage, low conduction losses, and small size. It is most commonly used in Solar Inverters and EV Chargers, but it can also be used in high-frequency switching applications, circuit protection and reverse current prevention, machines requiring high power components, and industrial automation. The device has a similar working principle to other IGBTs and a blocking voltage rating of up to 1700V, a minimum working temperature of -40 °C, and low conduction losses.

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