FP15R12KE3BOMA1

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The FP15R12KE3BOMA1 is a dedicated module of insulated-gate bipolar transistor (IGBT) produced by Infineon Technologies. This compact module is designed to help manufacturers achieve high-performance power conversion and system control. It is equipped with superior power-switching performance, provide improved system reliability and noise immunity, efficient energy utilization and long-term reliability.

Physics-wise, an insulated-gate transistor is a three-terminal semiconductor device in which current flow is controlled by a bias voltage applied to two terminals in comparison with a third terminal. These three terminals are the collector, the emitter, and the gate. This type of transistor is commonly employed in high-power switching applications, such as motor control and switching supplies. The main benefit of IGBT is its comparatively high switching speed when compared with traditional bipolar transistors.

The FP15R12KE3BOMA1 module is optimized for high current, high power switching. It is capable of handling up to 1.8kV, topology of NPT IGBT2, and diode FWD3 at a peak current rating of 15 A. Its 350µs (taken from its datasheet) turn-off time is suitable for medium load. Its design consists of a base plate with an external base plate connected through three M2.5 screws, which adds to its stability. Furthermore, the FP15R12KE3BOMA1 is capable of operating at a junction temperature of up to 150°C, with a thermal resistance that can reach only 2.3°C/W.

FP15R12KE3BOMA1 is suitable for electrical applications such as: DC-DC converters, solar inverters, high-end motor control, Uninterruptible Power Supply (UPS) systems, server power supplies, and high-end consumer applications. In respect to its working principle, the IGBT is used in the switching side. When the gate voltage of the device is positively biased, the IGBT gains an inversion layer in between the collector and emitter regions. This inversion layer behaves like a current channel and conducting current from collector to emitter region and hence, the transistor gets ‘ON’. Thus, IGBT offers fast switching and low switching losses with it.

In conclusion, with its superior performance and the long-term reliability that the FP15R12KE3BOMA1 provides, this module is a great choice for various electrical applications. In addition to its capability of high-power switching and noise immunity, it also features a high junction temperature and thermal resistance. This, combined with its fast switching time enables manufacturers to achieve optimized system control and power conversion, achieving higher efficiency with long-term reliability.

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