FP150R07N3E4B11BOSA1 Allicdata Electronics
Allicdata Part #:

FP150R07N3E4B11BOSA1-ND

Manufacturer Part#:

FP150R07N3E4B11BOSA1

Price: $ 99.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 650V 150A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FP150R07N3E4B11BOSA1 datasheetFP150R07N3E4B11BOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 90.09560
Stock 1000Can Ship Immediately
$ 99.11
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 150A
Power - Max: 430W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 9.3nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FP150R07N3E4B11BOSA1 is an Insulated Gate Bipolar Transistor (IGBT) module, which is commonly used in power conversion due to its ability to control large amounts of power in a compact package. It has a wide range of applications such as automotive powertrain, telecom power supplies, renewable energy and motor control.

The IGBT module consists of IGBT chips, freewheeling diodes, mounting hardware, and thermistor. All these components are packed in a metal-ceramic insulated housing. The IGBT chips used in this particular module is a 150A/750V chip. The metal-ceramic housing is made from an aluminum nitride substrate, which is covered with anionically passivated silicon dioxide on both sides. This provides for improved insulation and thermal management. The IGBT chip is mounted over an insulating layer of nickel plated copper which is further insulated by a layer of aluminum oxide.

The working principle of the FP150R07N3E4B11BOSA1 is fairly simple. It is essentially a switch that uses the principles of semiconductors to exploit the advantages of both bipolar transistors (BJTs) and MOSFETs. Unlike BJTs, the IGBT can switch on and off at relatively high speeds, making it suitable for use in applications with high power density such as motor control. The IGBT module is designed to provide high switching frequency and high current drive capability.

The FP150R07N3E4B11BOSA1 is widely used in a variety of automotive and industrial applications. These applications range from inverters and converters, motor drives, and HVAC systems, to welding machines, industrial tool systems, and more. The wide range of applications for this type of IGBT module, along with its ability to control high currents, makes it an ideal choice for many applications. It has been successfully used in the automotive industry, telecom industry, and renewable energy industry.

The IGBT module offers several advantages compared to other types of power converters. It offers higher power density, better switching speed, lower power loss and greater system efficiency as compared to other power converters. Additionally, it is reliable, cost effective and has a high electrical insulation strength. Furthermore, it also has the capability of providing a highly regulated output voltage, minimizing power losses when switching.

In conclusion, the FP150R07N3E4B11BOSA1 is a versatile IGBT module capable of controlling high-power devices in a safe and efficient manner. With its wide range of applications, it is one of the most popular IGBT modules available on the market today. Its high power density, low power loss, and cost effectiveness make it an attractive choice for many projects. It is well-suited for automotive, telecom, and renewable energy applications.

The specific data is subject to PDF, and the above content is for reference

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