Allicdata Part #: | FP150R12KT4PB11BPSA1-ND |
Manufacturer Part#: |
FP150R12KT4PB11BPSA1 |
Price: | $ 182.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1200V 150A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FP150R12KT4PB11BPSA1 Datasheet/PDF |
Quantity: | 6 |
1 +: | $ 165.94800 |
Series: | EconoPIM™3 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 150A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 150A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 9.35nF @ 25V |
Input: | Three Phase Bridge Rectifier |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FP150R12KT4PB11BPSA1 Application Field and Working Principle
The very high-performance FP150R12KT4PB11BPSA1 module is a full-bridge, field-stop IGBT/diode based module containing twelve IGBTs and twelve diodes. It is designed for use with renewable energy applications, like wind turbines and solar inverters. The FP150R12KT4PB11BPSA1 module is a popular switching module due to its high power and voltage ratings, fast switching speeds, and efficient heat dissipation.
In terms of the application field, the FP150R12KT4PB11BPSA1 module is designed to be used in a wide range of power electronics applications. Its versatile design makes it suitable for motor control, heating element control, and solar inverter applications, among others. In essence, it is designed to be used in power applications that require a fast switching time, high voltage and current ratings, and an efficient heat dissipation system.
In terms of the working principle, the FP150R12KT4PB11BPSA1 module is based on an IGBT/diode design. An IGBT, or Insulated Gate Bipolar Transistor, is an electronic device that combines the properties of both a BJT (Bipolar Junction Transistor) and an MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is made up of two transistors in one package, a P-type MOSFET and an N-type BJT, and is capable of efficiently switching both low and high temperatures. The FP150R12KT4PB11BPSA1 module is designed to be used with a field stop IGBT, which is a special type of IGBT with a built-in thermally sensitive thermal cutout. This ensures a more reliable and efficient operation of the module, as it prevents the module from overheating.
The FP150R12KT4PB11BPSA1 module is also designed to be used with twelve diodes for protection. Diodes are two-terminal devices that act as electrical one-way valves, allowing current to flow in one direction only. The module is designed to use a specific type of diode, known as a Field Stop Diode, which has a built-in temperature-sensitive thermal cutout, preventing the module from overheating.
In sum, the FP150R12KT4PB11BPSA1 module is a full-bridge, IGBT/diode based module designed to be used with renewable energy applications. It is a versatile module that can be used in a wide range of power applications, thanks to its high power and voltage ratings, fast switching speed, reliable and efficient heat dissipation system, and built-in field stop IGBTs and diodes for protection. This makes it an ideal choice of module for high-power, high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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